AP6928GMT-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP6928GMT-HF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.13(3.9) W
Предельно допустимое напряжение сток-исток (Uds): 30 V
Предельно допустимое напряжение затвор-исток (Ugs): 20(12) V
Максимально допустимый постоянный ток стока (Id): 48(105) A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 5(12.5) ns
Выходная емкость (Cd): 220(1170) pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0085(0.0026) Ohm
Тип корпуса: PMPAK5X6
Аналог (замена) для AP6928GMT-HF
AP6928GMT-HF Datasheet (PDF)
1.1. ap6928gmt-hf.pdf 
Size:130K _a-power
AP6928GMT-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE D1 Ў Simple Drive Requirement CH-1 BVDSS 30V Ў Easy for Synchronous Buck RDS(ON) 8.5m? G1 Converter Application ID 48A D2/S1 Ў RoHS Compliant & Halogen-Free CH-2 BVDSS 30V RDS(ON) 2.6m? G2 Description ID 105A S2 Advanced Power MOSFETs from APEC provide G2 G2 S2 S2 S2 th
5.1. ap6920gmt-hf.pdf Size:126K _a-power
AP6920GMT-HF Halogen-Free Product Advanced Power Dual N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 Ў Simple Drive Requirement CH-1 BVDSS 30V Ў Easy for Synchronous Buck RDS(ON) 8.5m? G1 Converter Application ID 48A D2/S1 Ў RoHS Compliant & Halogen-Free CH-2 BVDSS 30V RDS(ON) 3.8m? G2 Description ID 87A S2 Advanced Power MOSFETs from APEC provide G2 G2 S2 S2 S2
5.2. ap6925gy.pdf Size:160K _a-power
AP6925GY RoHS-compliant Product Advanced Power P-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D Ў Low Gate Charge BVDSS -16V NC K Ў Surface Mount Package RDS(ON) 150m? G Ў RoHS Compliant ID - 1.6A S SOT-26 A A D Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, ruggedized device design, ultra lower on-resi
5.3. ap6922gmt-hf.pdf Size:130K _a-power
AP6922GMT-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE D1 Ў Simple Drive Requirement CH-1 BVDSS 30V Ў Easy for Synchronous Buck RDS(ON) 8.5m? G1 Converter Application ID 48A D2/S1 Ў RoHS Compliant & Halogen-Free CH-2 BVDSS 30V RDS(ON) 3.8m? G2 Description ID 87A S2 Advanced Power MOSFETs from APEC provide G2 G2 S2 S2 S2 the
5.4. ap6923o.pdf Size:72K _a-power
AP6923O Advanced Power P-CHANNEL WITH SCHOTTKY DIODE Electronics Corp. POWER MOSFET ▼ Low On-Resistance A BVDSS -20V ▼ ▼ ▼ A A K ▼ Fast Switching Characteristic RDS(ON) 50mΩ ▼ ▼ ▼ G S ▼ Included Schottky Diode ID -3.5A ▼ ▼ ▼ S TSSOP-8 D Description D A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast
5.5. ap6926gmt.pdf Size:207K _a-power
AP6926GMT-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 ▼ Simple Drive Requirement CH-1 BVDSS 40V ▼ Easy for Synchronous Buck RDS(ON) 40mΩ G1 Converter Application ID 15A D2/S1 ▼ RoHS Compliant & Halogen-Free CH-2 BVDSS 40V RDS(ON) 20mΩ G2 Description ID 24A S2 Advanced Power MOSFETs from APEC provide G2 G2 S2 S
5.6. ap6921gmt-hf.pdf Size:128K _a-power
AP6921GMT-HF Halogen-Free Product Advanced Power Dual N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 Ў Simple Drive Requirement CH-1 BVDSS 30V Ў Easy for Synchronous Buck RDS(ON) 11.5m? G1 Converter Application ID 34A D2/S1 Ў RoHS Compliant & Halogen-Free CH-2 BVDSS 30V RDS(ON) 5m? G2 Description ID 74A S2 Advanced Power MOSFETs from APEC provide G2 G2 S2 S2 S2 t
5.7. ap6923gmt.pdf Size:206K _a-power
AP6923GMT-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE D1 ▼ Simple Drive Requirement CH-1 BVDSS 30V ▼ Easy for Synchronous Buck RDS(ON) 11mΩ G1 Converter Application ID 32A D2/S1 ▼ RoHS Compliant & Halogen-Free CH-2 BVDSS 30V RDS(ON) 7mΩ G2 Description ID 47A S2 Advanced Power MOSFETs from APEC provide G2 G2 S2 S2 S2
5.8. ap6924gey.pdf Size:60K _a-power
AP6924GEY RoHS-compliant Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE K Ў Low On-Resistance BVDSS 20V S D Ў Fast Switching Characteristic RDS(ON) 600m? Ў Included Schottky Diode ID 1A A A SOT-26 G Description The Advanced Power MOSFETs from APEC provide the D K designer with the best combination of fast switching, ruggedized device design, ult
5.9. ap6923gmt-hf.pdf Size:130K _a-power
AP6923GMT-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE D1 Ў Simple Drive Requirement CH-1 BVDSS 30V Ў Easy for Synchronous Buck RDS(ON) 11m? G1 Converter Application ID 32A D2/S1 Ў RoHS Compliant & Halogen-Free CH-2 BVDSS 30V RDS(ON) 7m? G2 Description ID 47A S2 Advanced Power MOSFETs from APEC provide G2 G2 S2 S2 S2 the de
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