AP75N07GI-HF. Аналоги и основные параметры

Наименование производителя: AP75N07GI-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 44.6 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 70 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 43 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 54 ns

Cossⓘ - Выходная емкость: 640 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm

Тип корпуса: TO-220CFM

Аналог (замена) для AP75N07GI-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP75N07GI-HF даташит

 ..1. Size:95K  ape
 ap75n07gi-hf.pdf pdf_icon

AP75N07GI-HF

AP75N07GI-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 43A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching

 6.1. Size:126K  ape
 ap75n07gw.pdf pdf_icon

AP75N07GI-HF

AP75N07GW RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 90A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 6.2. Size:152K  ape
 ap75n07gp.pdf pdf_icon

AP75N07GI-HF

AP75N07GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80A G Halogen Free & RoHS Compliant S Description AP75N07 series are from Advanced Power innovated

 6.3. Size:192K  ape
 ap75n07gs p.pdf pdf_icon

AP75N07GI-HF

AP75N07GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, TO-220(P) D S ruggedized device design,

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