AP83T03GJ-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP83T03GJ-HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 86 ns
Cossⓘ - Выходная емкость: 340 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: TO-252
Аналог (замена) для AP83T03GJ-HF
AP83T03GJ-HF Datasheet (PDF)
ap83t03gh-hf ap83t03gj-hf.pdf

AP83T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP83T03 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the l
ap83t03gj.pdf

AP83T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP83T03 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the l
ap83t03gh j-hf.pdf

AP83T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S
ap83t03gm-hf.pdf

AP83T03GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 6mD Fast Switching Characteristic ID 16AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP83T03 series are from Advanced Power innovated design andsilicon process technolo
Другие MOSFET... AP80N30W , AP80T10GP-HF , AP80T10GR-HF , AP83T02GH-HF , AP83T02GJ-HF , AP83T03AGH-HF , AP83T03AGMT-HF , AP83T03GH-HF , STP80NF70 , AP83T03GM-HF , AP83T03GMT-HF , AP85T03GH , AP85T03GJ , AP85T03GP-HF , AP85T03GS-HF , AP85T08GP-HF , AP85T08GS-HF .
History: STRH8N10 | NCE65N260F | AFN2304AS | SSM6J215FE | 2SK2690-01 | HM8810A | AP10P10GJ
History: STRH8N10 | NCE65N260F | AFN2304AS | SSM6J215FE | 2SK2690-01 | HM8810A | AP10P10GJ



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