Справочник MOSFET. AP90T06GP-HF

 

AP90T06GP-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP90T06GP-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 107 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 68 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 76 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 360 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для AP90T06GP-HF

 

 

AP90T06GP-HF Datasheet (PDF)

 ..1. Size:93K  ape
 ap90t06gp-hf.pdf

AP90T06GP-HF AP90T06GP-HF

AP90T06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 68V Lower On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 76AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged

 8.1. Size:206K  ape
 ap90t03gh ap90t03gj.pdf

AP90T06GP-HF AP90T06GP-HF

AP90T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On- resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AGSDescriptionGThe TO-252 package is widely preferred for commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage ap

 8.2. Size:124K  ape
 ap90t03gr.pdf

AP90T06GP-HF AP90T06GP-HF

AP90T03GRRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide thede signer withthe best combination of fast switching, ruggedized device design,low on-resistance

 8.3. Size:92K  ape
 ap90t03gs-hf.pdf

AP90T06GP-HF AP90T06GP-HF

AP90T03GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 8.4. Size:158K  ape
 ap90t03gs.pdf

AP90T06GP-HF AP90T06GP-HF

AP90T03GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design,DS TO-263(S)

 8.5. Size:152K  ape
 ap90t03gi.pdf

AP90T06GP-HF AP90T06GP-HF

AP90T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 4m Full Isolation Package ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

 8.6. Size:126K  ape
 ap90t03p-hf.pdf

AP90T06GP-HF AP90T06GP-HF

AP90T03P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desig

 8.7. Size:146K  ape
 ap90t03p.pdf

AP90T06GP-HF AP90T06GP-HF

AP90T03PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance

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