Справочник MOSFET. AP92T12GI-HF

 

AP92T12GI-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP92T12GI-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 53 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 97 nC
   trⓘ - Время нарастания: 96 ns
   Cossⓘ - Выходная емкость: 800 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO-220CFM

 Аналог (замена) для AP92T12GI-HF

 

 

AP92T12GI-HF Datasheet (PDF)

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ap92t12gi-hf.pdf

AP92T12GI-HF
AP92T12GI-HF

AP92T12GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 53AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDTO-220CFM(I)ruggedized device de

 6.1. Size:130K  ape
ap92t12gp.pdf

AP92T12GI-HF
AP92T12GI-HF

AP92T12GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 130AGSDescriptionAP92T12 series are from Advanced Power innovated designand silicon process technology to ach

 6.2. Size:95K  ape
ap92t12gp-hf.pdf

AP92T12GI-HF
AP92T12GI-HF

AP92T12GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 130AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-res

 9.1. Size:93K  ape
ap92t03gi-hf.pdf

AP92T12GI-HF
AP92T12GI-HF

AP92T03GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrugge

 9.2. Size:94K  ape
ap92t03gsp-hf.pdf

AP92T12GI-HF
AP92T12GI-HF

AP92T03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Lower On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching,ruggediz

 9.3. Size:234K  ape
ap92t03gp.pdf

AP92T12GI-HF
AP92T12GI-HF

AP92T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Lower On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching,ruggedized device design, lowDTO-263(

 9.4. Size:231K  ape
ap92t03gs ap92t03gp.pdf

AP92T12GI-HF
AP92T12GI-HF

AP92T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Lower On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching,ruggedized device design, lowDTO-263(

 9.5. Size:128K  ape
ap92t03gh ap92t03gj ap92t03gh j-hf.pdf

AP92T12GI-HF
AP92T12GI-HF

AP92T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Lower On-resistance RDS(ON) 4m Fast Switching Characteristics ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDS TO-252(H)best combination of fa

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