AP92T12GI-HF. Аналоги и основные параметры

Наименование производителя: AP92T12GI-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 60 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 120 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 53 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 96 ns

Cossⓘ - Выходная емкость: 800 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm

Тип корпуса: TO-220CFM

Аналог (замена) для AP92T12GI-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP92T12GI-HF даташит

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ap92t12gi-hf.pdfpdf_icon

AP92T12GI-HF

AP92T12GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 53A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D TO-220CFM(I) ruggedized device de

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ap92t12gp.pdfpdf_icon

AP92T12GI-HF

AP92T12GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 130A G S Description AP92T12 series are from Advanced Power innovated design and silicon process technology to ach

 6.2. Size:95K  ape
ap92t12gp-hf.pdfpdf_icon

AP92T12GI-HF

AP92T12GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 130A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-res

 9.1. Size:93K  ape
ap92t03gi-hf.pdfpdf_icon

AP92T12GI-HF

AP92T03GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 4m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rugge

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