AP9404GM-HF. Аналоги и основные параметры
Наименование производителя: AP9404GM-HF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 120 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: SO-8
Аналог (замена) для AP9404GM-HF
- подборⓘ MOSFET транзистора по параметрам
AP9404GM-HF даташит
..1. Size:95K ape
ap9404gm-hf.pdf 
AP9404GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 12m D Fast Switching Characteristic ID 12A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas
9.1. Size:96K ape
ap9402agyt-hf.pdf 
AP9402AGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 11.5A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device de
9.2. Size:94K ape
ap9408agm-hf.pdf 
AP9408AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D Simple Drive Requirement RDS(ON) 10m D D Fast Switching Characteristic ID 12.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.3. Size:97K ape
ap9402gmt-hf.pdf 
AP9402GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D SO-8 Compatible with Heatsink RDS(ON) 18m Low On-resistance ID 20.6A G RoHS Compliant & Halogen-Free D S D D Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchi
9.4. Size:143K ape
ap9408agh.pdf 
AP9408AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53A G S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) ruggedized device desi
9.5. Size:99K ape
ap9408gh ap9408gj.pdf 
AP9408GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic G ID 57A S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) ruggedized device desi
9.6. Size:59K ape
ap9408gm-hf.pdf 
AP9408GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 10m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of f
9.7. Size:169K ape
ap9408agm.pdf 
AP9408AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D Simple Drive Requirement RDS(ON) 10m D D Fast Switching Characteristic ID 12.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9408A series are fro
9.8. Size:95K ape
ap9402gyt-hf.pdf 
AP9402GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 11.5A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device de
9.9. Size:93K ape
ap9408cgm-hf.pdf 
AP9408CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 8m D Fast Switching Characteristic ID 14A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas
9.10. Size:145K ape
ap9408agp.pdf 
AP9408AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a
9.11. Size:169K ape
ap9408gm.pdf 
AP9408GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 10m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9408 series are from
9.12. Size:152K ape
ap9408agi.pdf 
AP9408AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 10m Full Isolation Package ID 53A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
Другие IGBT... AP92U03GP-HF, AP92U03GS-HF, AP93T03AGMT-HF, AP93T08GP-HF, AP9402AGYT-HF, AP9402GMT-HF, AP9402GYT-HF, AP9404GH-HF, IRF640N, AP9408AGH, AP9408AGI, AP9408AGM-HF, AP9408AGP, AP9408CGM-HF, AP9408GH, AP9408GJ, AP9408GM-HF
