2SK1936-01. Аналоги и основные параметры
Наименование производителя: 2SK1936-01
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 160 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO-3P
Аналог (замена) для 2SK1936-01
- подборⓘ MOSFET транзистора по параметрам
2SK1936-01 даташит
..1. Size:214K fuji
2sk1936-01.pdf 
N-channel MOS-FET 2SK1936-01 FAP-IIA Series 500V 0,76 10A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ
7.1. Size:219K inchange semiconductor
2sk1936.pdf 
isc N-Channel MOSFET Transistor 2SK1936 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
8.2. Size:381K toshiba
2sk1930.pdf 
2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII.5) 2SK1930 Chopper Regulator, DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Y = 2.0 S (typ.) fs Low leakage current I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode Vth = 1.5 3
8.3. Size:96K renesas
rej03g0984 2sk1933ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.4. Size:82K renesas
2sk1934.pdf 
2SK1934 Silicon N Channel MOS FET REJ03G0985-0200 (Previous ADE-208-1333) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source
8.5. Size:82K renesas
2sk1933.pdf 
2SK1933 Silicon N Channel MOS FET REJ03G0984-0300 (Previous ADE-208-1332) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source
8.7. Size:213K fuji
2sk1939-01.pdf 
N-channel MOS-FET 2SK1939-01 FAP-IIA Series 600V 1,2 8A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv
8.8. Size:215K fuji
2sk1937-01.pdf 
N-channel MOS-FET 2SK1937-01 FAP-IIA Series 500V 0,48 15A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ
8.9. Size:244K fuji
2sk1938.pdf 
FUJI POWER MOSFET 2SK1938-01R N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching 5.5 0.3 0.3 Low on-resistance 0.2 15.5 3.2 3.2+0.3 No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof 0.3 2.1 0.3 1.6 +0.2 1.1 0.1 0.2 3.5 0.2 0.2 Applications 5.45 5.45 0.6+0.2 Switching r
8.10. Size:237K inchange semiconductor
2sk1939-01.pdf 
isc N-Channel MOSFET Transistor 2SK1939-01 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
8.11. Size:237K inchange semiconductor
2sk1937-01.pdf 
isc N-Channel MOSFET Transistor 2SK1937-01 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.12. Size:219K inchange semiconductor
2sk1938.pdf 
isc N-Channel MOSFET Transistor 2SK1938 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT
8.13. Size:238K inchange semiconductor
2sk1938-01.pdf 
isc N-Channel MOSFET Transistor 2SK1938-01 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
8.14. Size:219K inchange semiconductor
2sk1939.pdf 
isc N-Channel MOSFET Transistor 2SK1939 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
8.15. Size:219K inchange semiconductor
2sk1937.pdf 
isc N-Channel MOSFET Transistor 2SK1937 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 50
8.16. Size:223K inchange semiconductor
2sk1933.pdf 
isc N-Channel MOSFET Transistor 2SK1933 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V
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