AP95T10GI-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP95T10GI-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 210 ns
Cossⓘ - Выходная емкость: 910 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm
Тип корпуса: TO-220CFM
- подбор MOSFET транзистора по параметрам
AP95T10GI-HF Datasheet (PDF)
ap95t10gi-hf.pdf

AP95T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDTO-220CFM(I)ruggedized device de
ap95t10gi.pdf

AP95T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAP95T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and
ap95t10gp.pdf

AP95T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAP95T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and fas
ap95t10gw-hf.pdf

AP95T10GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6.4m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-resist
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP83T03GJ | BUK455-100B | SSF65R420S2 | FDG6320C | SI7413DN | STB10NK60ZT4 | NCEAP016N10LL
History: AP83T03GJ | BUK455-100B | SSF65R420S2 | FDG6320C | SI7413DN | STB10NK60ZT4 | NCEAP016N10LL



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