AP95T10GW-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP95T10GW-HF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 375 W
Предельно допустимое напряжение сток-исток (Uds): 100 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Максимально допустимый постоянный ток стока (Id): 150 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 110 nC
Время нарастания (tr): 210 ns
Выходная емкость (Cd): 910 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0064 Ohm
Тип корпуса: TO-3P
Аналог (замена) для AP95T10GW-HF
AP95T10GW-HF Datasheet (PDF)
1.1. ap95t10gw-hf.pdf 
Size:59K _a-power
AP95T10GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower On-resistance RDS(ON) 6.4m? Ў RoHS Compliant & Halogen-Free ID 150A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance an
2.1. ap95t10gp-hf.pdf Size:95K _a-power
AP95T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower On-resistance RDS(ON) 6.4m? Ў RoHS Compliant & Halogen-Free ID 150A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance an
2.2. ap95t10gi-hf.pdf Size:93K _a-power
AP95T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower On-resistance RDS(ON) 6.4m? Ў RoHS Compliant & Halogen-Free ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D TO-220CFM(I) ruggedized device design, lo
2.3. ap95t10gp.pdf Size:144K _a-power
AP95T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 100V ▼ Lower On-resistance RDS(ON) 6.4mΩ ▼ RoHS Compliant & Halogen-Free ID 150A G S Description AP95T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fas
2.4. ap95t10gi.pdf Size:175K _a-power
AP95T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 100V ▼ Lower On-resistance RDS(ON) 6.4mΩ ▼ RoHS Compliant & Halogen-Free ID 60A G S Description AP95T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and
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Список транзисторов
Обновления
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