AP9926GM-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP9926GM-HF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.2 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 11 nC
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 90 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.03 Ohm
Тип корпуса: SO-8
Аналог (замена) для AP9926GM-HF
AP9926GM-HF Datasheet (PDF)
ap9926gm-hf.pdf
AP9926GM-HFHalogen-Free ProductAdvanced Power Dual N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 30mD1 Surface Mount Package ID 6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionD2D1AP9926 series are from Advanced Power innovated design andsilicon process te
ap9926gm.pdf
AP9926GM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 30mD1 Surface Mount Package ID 6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionD2D1AP9926 series ar
ap9926go.pdf
AP9926GOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 20V S2S2D2Capable of 2.5V gate drive RDS(ON) 28m G1S1Low drive current S1 ID 4.6A TSSOP-8D1Surface mount package DescriptionD2The Advanced Power MOSFETs fr
ap9926geo-hf.pdf
AP9926GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 2.5V Gate Drive RDS(ON) 28mG1S1 Low Drive Current S1 ID 4.6ATSSOP-8D1 Surface Mount Package RoHS Compliant & Halogen-FreeDescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1
ap9926gem.pdf
AP9926GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VD2D2 Capable of 2.5V gate drive D1 RDS(ON) 30mD1 Low drive current ID 6AG2S2 Surface mount packageG1SO-8S1DescriptionThe Advanced Power MOSFETs from APEC provide the D1 D2designer with the best combination of fast sw
ap9926geo.pdf
AP9926GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 2.5V Gate Drive RDS(ON) 28mG1S1 Low Drive Current S1 ID 4.6ATSSOP-8D1 Surface Mount Package RoHS Compliant & Halogen-FreeDescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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