AP9971AGM-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP9971AGM-HF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 17.5 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 85 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.05 Ohm
Тип корпуса: SO-8
Аналог (замена) для AP9971AGM-HF
AP9971AGM-HF Datasheet (PDF)
ap9971agm-hf.pdf
AP9971AGM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60VD2D2D1 Single Drive Requirement RDS(ON) 50mD1 Surface Mount Package ID 5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide the designer withD2D1the best combinat
ap9971agm.pdf
AP9971AGM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60V D2D2D1 Simple Drive Requirement RDS(ON) 50mD1 Surface Mount Package ID 5AG2S2 RoHS Compliant & Halogen-Free G1S1SO-8DescriptionAP9971A series are from A
ap9971agp ap9971ags.pdf
AP9971AGS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GTO-220(P)Druggedized device design
ap9971agd.pdf
AP9971AGDRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low On-resistance BVDSS 60VD2D1 Fast Switching Speed RDS(ON) 50mD1 PDIP-8 Package ID 5AG2S2PDIP-8G1S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,
ap9971agh-hf ap9971agj-hf.pdf
AP9971AGH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AG Halogen Free & RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDSbest combination of fast switchin
ap9971ags-hf.pdf
AP9971AGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggediz
ap9971agh ap9971agj.pdf
AP9971AGH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer withDS TO-252(H)the best combination of fast switching, ruggedized device desig
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C