AP9976GM - описание и поиск аналогов

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 ap9976gm.pdf 

AP9976GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS 60V D2 D2 Simple Drive Requirement RDS(ON) 20.5m D1 D1 Fast Switching Characteristic ID 7.6A G2 S2 G1 S1 D2 D1 Description Advanced Power MOSFETs from APEC provide the designer with G2 G1 the best combination of fast switching, rug

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 ap9976gp.pdf 

AP9976GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 21m Fast Switching Characteristic ID 30A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G low on-resistance

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 ap9974gh-hf ap9974gj-hf.pdf 

AP9974GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Single Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast swi

 9.2. Size:154K  ape
 ap9972agp.pdf 

AP9972AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Simple Drive Requirement RDS(ON) 16m Fast Switching Performance ID 60A G RoHS Compliant & Halogen-Free S Description AP9972A series are from Advanced Power innovated desi

 9.3. Size:197K  ape
 ap9971agp ap9971ags.pdf 

AP9971AGS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) D ruggedized device design

 9.4. Size:106K  ape
 ap9977agh-hf.pdf 

AP9977AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 9A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D S TO-2

 9.5. Size:94K  ape
 ap9970gp-hf.pdf 

AP9970GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resist

 9.6. Size:169K  ape
 ap9971gm.pdf 

AP9971GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60V D2 D2 D1 Simple Drive Requirement RDS(ON) 50m D1 Surface Mount Package ID 5A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 D2 D1 Description AP9971 series are

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 ap9973gd.pdf 

AP9973GD Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low Gate Charge BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 80m D1 PDIP-8 Package ID 3.9A RoHS Compliant G2 S2 PDIP-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ru

 9.8. Size:165K  ape
 ap9972gs.pdf 

AP9972GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60A G S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve th

 9.9. Size:216K  ape
 ap9971gs.pdf 

AP9971GS Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 36m RoHS Compliant & Halogen-Free ID 25A G G S S Description AP4604 series are from Advanced Power innovated design AP9971 series are from Advanced Power innovated design and and silicon process tec

 9.10. Size:152K  ape
 ap9974gp.pdf 

AP9974GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72A G RoHS Compliant & Halogen-Free S Description AP9974 series are from Advanced Power innovated de

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 ap9971agd.pdf 

AP9971AGD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low On-resistance BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 50m D1 PDIP-8 Package ID 5A G2 S2 PDIP-8 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,

 9.12. Size:207K  ape
 ap9977gjv.pdf 

AP9977GJV Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Performance ID 11A G RoHS Compliant & Halogen-Free S Description AP9977 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible

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 ap9977gh-hf ap9977gj-hf.pdf 

AP9977GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 100m Surface Mount Package ID 11A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized d

 9.14. Size:153K  ape
 ap9972gp.pdf 

AP9972GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60A G S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve th

 9.15. Size:153K  ape
 ap9971gi-hf.pdf 

AP9971GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 60V D Single Drive Requirement RDS(ON) 36m Full Isolation Package ID 23A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

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 ap9972gs p-hf.pdf 

AP9972GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device design,

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 ap9970gi-hf.pdf 

AP9970GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 100A G S Description AP9970 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and fa

 9.18. Size:98K  ape
 ap9974gs p-hf.pdf 

AP9974GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized d

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 ap9971gd.pdf 

AP9971GD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low On-resistance BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 50m D1 PDIP-8 Package ID 5A G2 S2 PDIP-8 G1 S1 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device design, ul

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 ap9971agh-hf ap9971agj-hf.pdf 

AP9971AGH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22A G Halogen Free & RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the G D S best combination of fast switchin

 9.21. Size:100K  ape
 ap9971gs p-hf.pdf 

AP9971GS/P-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D Single Drive Requirement RDS(ON) 36m Surface Mount Package ID 25A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device design, low

 9.22. Size:93K  ape
 ap9978agp-hf.pdf 

AP9978AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 66A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedi

 9.23. Size:93K  ape
 ap9974bgp.pdf 

AP9974BGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D Single Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID 65A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resista

 9.24. Size:93K  ape
 ap9970agp-hf.pdf 

AP9970AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3m RoHS Compliant & Halogen-Free ID 250A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 9.25. Size:76K  ape
 ap9974gs ap9974gp.pdf 

AP9974GS/P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi

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 ap9973gp ap9973gs.pdf 

AP9973GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device design, low o

 9.27. Size:95K  ape
 ap9972agr-hf.pdf 

AP9972AGR-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 16m Fast Switching Performance ID 60A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

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 ap9971gh-hf ap9971gj-hf.pdf 

AP9971GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D Single Drive Requirement RDS(ON) 36m Surface Mount Package ID 25A G RoHS Compliant S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 9.29. Size:93K  ape
 ap9978gp.pdf 

AP9978GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 10m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistan

 9.30. Size:94K  ape
 ap9972gh-hf.pdf 

AP9972GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 60A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rugge

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 ap9973gh-hf ap9973gj-hf.pdf 

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H)

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 ap9975gm-hf.pdf 

AP9975GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D2 D2 D1 Lower On-resistance RDS(ON) 21m D1 Surface Mount Package ID 7.6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 designer with the best combination of

 9.33. Size:230K  ape
 ap9972gh.pdf 

AP9972GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 60A G RoHS Compliant & Halogen-Free S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos

 9.34. Size:170K  ape
 ap9975gm.pdf 

AP9975GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS 60V D2 D2 D1 Lower On-resistance RDS(ON) 21m D1 Surface Mount Package ID 7.6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP9975 series are fr

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 ap9972agi.pdf 

AP9972AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 16m Fast Switching Performance ID 32A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G low on-resistance and

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 ap9971agm-hf.pdf 

AP9971AGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60V D2 D2 D1 Single Drive Requirement RDS(ON) 50m D1 Surface Mount Package ID 5A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with D2 D1 the best combinat

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 ap9971ags-hf.pdf 

AP9971AGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

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 ap9977agm.pdf 

AP9977AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 60V D2 D2 Single Drive Requirement RDS(ON) 100m D1 D1 Surface Mount Package ID 3.6A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with D2 D1 the best combination of fast switching, rug

 9.39. Size:136K  ape
 ap9970gk.pdf 

AP9970GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 50m S Fast Switching Characteristic ID 5.8A D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch

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 ap9970agp.pdf 

AP9970AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3m RoHS Compliant & Halogen-Free ID 235A G S Description AP9970A series are from Advanced Power innovated design and silicon process technology to achiev

 9.41. Size:235K  ape
 ap9973gh.pdf 

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description AP9973 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible

 9.42. Size:186K  ape
 ap9974agh.pdf 

AP9974AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 12m Surface Mount Package ID 68A G RoHS Compliant & Halogen-Free S Description AP9974A series are from Advanced Power innovated design and

 9.43. Size:94K  ape
 ap9974agh-hf.pdf 

AP9974AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Surface Mount Package ID 68A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, r

 9.44. Size:232K  ape
 ap9979gh.pdf 

AP9979GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 48m Fast Switching Characteristic ID 20A G RoHS Compliant & Halogen-Free S Description AP9979 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possi

 9.45. Size:95K  ape
 ap9979gh-hf.pdf 

AP9979GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 48m Fast Switching Characteristic ID 20A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized dev

 9.46. Size:93K  ape
 ap9970gw-hf.pdf 

AP9970GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

 9.47. Size:58K  ape
 ap9970gk-hf.pdf 

AP9970GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 50m S Fast Switching Characteristic ID 5.8A D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch

 9.48. Size:96K  ape
 ap9974agp-hf.pdf 

AP9974AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 68A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized d

 9.49. Size:93K  ape
 ap9974ags-hf.pdf 

AP9974AGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS 60V D Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 68A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S

 9.50. Size:199K  ape
 ap9973gj.pdf 

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description AP9973 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible

 9.51. Size:95K  ape
 ap9972gi-hf.pdf 

AP9972GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m Lower On-resistance ID 35A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D S ruggedized dev

 9.52. Size:98K  ape
 ap9971gh ap9971gj.pdf 

AP9971GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D Single Drive Requirement RDS(ON) 36m Surface Mount Package ID 25A G S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on

 9.53. Size:231K  ape
 ap9971agh ap9971agj.pdf 

AP9971AGH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22A G S Description G Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device desig

 9.54. Size:62K  ape
 ap9977agh.pdf 

AP9977AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with G D S TO-252(H) the best combination of fast switching, ruggedized device design, lo

 9.55. Size:62K  ape
 ap9973gm.pdf 

AP9973GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D2 D2 Single Drive Requirement RDS(ON) 80m D1 D1 Surface Mount Package ID 3.9A G2 RoHS Compliant S2 G1 SO-8 S1 Description D2 The Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switchi

 9.56. Size:166K  ape
 ap9971agm.pdf 

AP9971AGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60V D2 D2 D1 Simple Drive Requirement RDS(ON) 50m D1 Surface Mount Package ID 5A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP9971A series are from A

 9.57. Size:212K  ape
 ap9977gm.pdf 

AP9977GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D2 Single Drive Requirement RDS(ON) 100m D2 D1 Surface Mount Package ID 3.3A D1 G2 S2 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des

 9.58. Size:95K  ape
 ap9972gr.pdf 

AP9972GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 18m RoHS Compliant ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiven

 9.59. Size:235K  ape
 ap9979gj.pdf 

AP9979GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 48m Surface Mount Package ID 20A G S Description G Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device design, low on-r

 9.60. Size:120K  ape
 ap9973gi.pdf 

AP9973GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 60V D Single Drive Requirement RDS(ON) 80m Full Isolation Package ID 14A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 9.61. Size:211K  ape
 ap9971gi.pdf 

AP9971GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance D BVDSS 60V Simple Drive Requirement RDS(ON) 36m Full Isolation Package ID3 23A G RoHS Compliant S Description AP9971 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-r

 9.62. Size:95K  ape
 ap9972agp-hf.pdf 

AP9972AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 16m Fast Switching Performance ID 60A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devi

 9.63. Size:211K  ape
 ap9972gi.pdf 

AP9972GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m Lower On-resistance ID 35A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design

 9.64. Size:211K  ape
 ap9970gw.pdf 

AP9970GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID3 240A G S Description AP9970 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast

 9.65. Size:181K  ape
 ap9977gm-hf.pdf 

AP9977GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D2 D2 D1 Simple Drive Requirement RDS(ON) 100m D1 Surface Mount Package ID 3.3A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP9977 series are from Advanced Power innovated design and D2 D1 silicon process tech

 9.66. Size:95K  ape
 ap9971gm-hf.pdf 

AP9971GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60V D2 D2 D1 Single Drive Requirement RDS(ON) 50m D1 Surface Mount Package ID 5A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 D2 D1 Description Advanced Power MOSFETs from APEC provide the G2 G1 designer with the best c

 9.67. Size:234K  ape
 ap9974gh.pdf 

AP9974GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Simple Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74A G RoHS Compliant & Halogen-Free S Description AP9974 series are from Advanced Power innovated design and silicon G D S process technology to achieve the

 9.68. Size:198K  ape
 ap9971gp.pdf 

AP9971GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D Simple Drive Requirement RDS(ON) 36m Surface Mount Package ID 25A G RoHS Compliant & Halogen-Free S Description AP9971 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible o

 9.69. Size:198K  ape
 ap9974gj.pdf 

AP9974GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Simple Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74A G RoHS Compliant & Halogen-Free S Description AP9974 series are from Advanced Power innovated design and silicon G D S process technology to achieve the

 9.70. Size:1198K  kexin
 ap9974.pdf 

SMD Type MOSFET N-Channel MOSFET AP9974 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features VDS (V) = 60V ID = 68 A (VGS = 10V) 0.127 +0.1 0.80-0.1 RDS(ON) 12m (VGS = 10V) max RDS(ON) 15m (VGS = 4.5V) Single Drive Requirement + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4.60 -0.15 2 Drain 3 Source D G S

 9.71. Size:819K  cn vbsemi
 ap9974gs.pdf 

AP9974GS www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Source

 9.72. Size:906K  cn vbsemi
 ap9971gm.pdf 

AP9971GM www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel

 9.73. Size:770K  cn vbsemi
 ap9971gh.pdf 

AP9971GH www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise note

 9.74. Size:811K  cn vbsemi
 ap9971gj.pdf 

AP9971GJ www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secondar

 9.75. Size:822K  cn vbsemi
 ap9973gj.pdf 

AP9973GJ www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secondar

 9.76. Size:1980K  cn vbsemi
 ap9971gi.pdf 

AP9971GI www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Single

 9.77. Size:1134K  cn vbsemi
 ap9971gp.pdf 

AP9971GP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire