AP9992GP-A-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP9992GP-A-HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 166 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 115 ns
Cossⓘ - Выходная емкость: 930 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.00299 Ohm
Тип корпуса: TO-220
Аналог (замена) для AP9992GP-A-HF
AP9992GP-A-HF Datasheet (PDF)
ap9992gp-a-hf.pdf

AP9992GP-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 2.99m Fast Switching Characteristic ID 180AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the low
ap9992gp-hf.pdf

AP9992GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide thedesigner wit
ap9992gr-hf.pdf

AP9992GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theThe Advanced Power MOSFETs from APEC provide
ap9992gi-hf.pdf

AP9992GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 84AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
Другие MOSFET... AP9990GH-HF , AP9990GIF-HF , AP9990GMT-HF , AP9990GP-HF , AP9990GR-HF , AP9992AGI-HF , AP9992AGP-HF , AP9992GI-HF , IRF4905 , AP9992GP-HF , AP9992GR-HF , AP9995GH-HF , AP9995GJ-HF , AP9997AGH-HF , AP9997BGH-HF , AP9997BGJ-HF , AP9997GH-HF .
History: FQPF50N06L | 2SK4067I | AP4800GM | BLP032N06-Q | AP3700MT | HY4306B | DH028N03D
History: FQPF50N06L | 2SK4067I | AP4800GM | BLP032N06-Q | AP3700MT | HY4306B | DH028N03D



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