Справочник MOSFET. AP9T18GEJ

 

AP9T18GEJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP9T18GEJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 16 nC
   trⓘ - Время нарастания: 84 ns
   Cossⓘ - Выходная емкость: 205 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для AP9T18GEJ

 

 

AP9T18GEJ Datasheet (PDF)

 ..1. Size:126K  ape
 ap9t18geh ap9t18gej.pdf

AP9T18GEJ AP9T18GEJ

AP9T18GEH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD G-S Diode embedded BVDSS 20VG Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 40A RoHS Compliant SDescriptionThe Advanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast switching,TO-252(H)rugg

 7.1. Size:98K  ape
 ap9t18gh-hf.pdf

AP9T18GEJ AP9T18GEJ

AP9T18GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38AG RoHS Compliant & Halogen-FreeSDescriptionAP9T18 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest po

 7.2. Size:212K  ape
 ap9t18gh ap9t18gj.pdf

AP9T18GEJ AP9T18GEJ

AP9T18GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 38AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, ultra

 9.1. Size:60K  ape
 ap9t16agh-hf.pdf

AP9T18GEJ AP9T18GEJ

AP9T16AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDSTO-252(H)best combination of fas

 9.2. Size:98K  ape
 ap9t15gh ap9t15gj.pdf

AP9T18GEJ AP9T18GEJ

AP9T15GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast switching,ruggedi

 9.3. Size:262K  ape
 ap9t16gh ap9t16gj.pdf

AP9T18GEJ AP9T18GEJ

AP9T16GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 25m Single Drive Requirement ID 25AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching, TO-252(H)Sruggedized device design, ultr

 9.4. Size:186K  ape
 ap9t16agh.pdf

AP9T18GEJ AP9T18GEJ

AP9T16AGH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5AG RoHS Compliant & Halogen-FreeSDescriptionGAP9T16A series are from Advanced Power inn

 9.5. Size:71K  ape
 ap9t19gj.pdf

AP9T18GEJ AP9T18GEJ

AP9T19GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS 12V DCapable of 2.5V gate drive RDS(ON) 16m Single Drive Requirement ID 33A GSDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combinat

 9.6. Size:98K  ape
 ap9t15gh-hf ap9t15gj-hf.pdf

AP9T18GEJ AP9T18GEJ

AP9T15GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast swi

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top