2SK1358 - описание и поиск аналогов

TOSHIBA Discrete Semiconductors 2SK1358 Industrial Applications Unit in mm Field Effect Transistor Silicon N Channel MOS Type ( -MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features Low Drain-Source ON Resistance - RDS(ON) = 1.1 (Typ.) High Forward Transfer Admittance - Yfs = 4.0S (Typ.) Low Leakage Current -

isc N-Channel MOSFET Transistor 2SK1358 DESCRIPTION Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high current DC-DC converter, Relay Drive adn Moto Drives Applications. A

2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII ) 2SK1359 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Yfs = 2.0 S (typ.) Low leakage current IDSS = 300 A (max) (VDS = 800 V) Enhancement mode Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

www.DataSheet4U.com www.DataSheet4U.com

isc N-Channel MOSFET Transistor 2SK1356 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain

isc N-Channel MOSFET Transistor 2SK1352 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain

isc N-Channel MOSFET Transistor 2SK1351 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain

isc N-Channel MOSFET Transistor 2SK1350 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 200

isc N-Channel MOSFET Transistor 2SK1357 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vol