2SK3025 - описание и поиск аналогов

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3025 Silicon N-channel power MOS FET Features Package Code Avalanche energy capability guaranteed High-speed switching U-DL Low ON resistance Ron Pin Name No secondary breakdown 1 Gate Low-voltage drive 2 Drain High electrostatic energy capability 3 Source

Power F-MOS FETs 2SK3027 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 4.6 0.2 Low-voltage drive 9.9 0.3 2.9 0.2 High electrostatic breakdown voltage 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

Power F-MOS FETs 2SK3028 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 15.5 0.5 3.0 0.3 Low-voltage drive 3.2 0.1 High electrostatic breakdown voltage 5 5 Applications Contactless relay Diving circuit for a solenoid 5 5 Driving circuit

Power F-MOS FETs 2SK3029 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 5.3 0.1 No secondary breakdown 4.35 0.1 0.5 0.1 Low-voltage drive High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.0

Power F-MOS FETs 2SK3023 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05

Power F-MOS FETs 2SK3026 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 4.6 0.2 Low-voltage drive 9.9 0.3 2.9 0.2 High electrostatic breakdown voltage 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit mm Low reverse transfer capacitance Crss = 0.035 pF (typ.) Low noise figure NF = 1.7dB (typ.) High power gain G = 28dB (typ.) ps Recommend operation voltage 5 15 V Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit

Ordering number ENN6230 N-Channel Silicon MOSFET 2SK3021 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2083B [2SK3021] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3021] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 Gate 0 to 0

Ordering number ENN6229 N-Channel Silicon MOSFET 2SK3020 DC/DC Converter Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2083B [2SK3020] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3020] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 Gate 0 to 0

Power F-MOS FETs 2SK3024 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05 2 0.5 0.1

isc N-Channel MOSFET Transistor 2SK3027 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =12m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3022 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 135m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3028 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =7.5m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3029 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =0.42m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3023 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3024 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =50m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3026 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =18m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d