3SK256. Аналоги и основные параметры

Наименование производителя: 3SK256

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 13.5 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.03 A

Tj ⓘ - Максимальная температура канала: 125 °C

Электрические характеристики

Тип корпуса: 2-2K1B

Аналог (замена) для 3SK256

- подборⓘ MOSFET транзистора по параметрам

 

3SK256 даташит

 ..1. Size:209K  toshiba
3sk256.pdfpdf_icon

3SK256

3SK256 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK256 TV Tuner, UHF RF Amplifier Applications Unit mm Superior cross modulation performance. Low reverse transfer capacitance C = 0.015 pF (typ.) rss Low noise figure NF = 1.9dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 13

 9.1. Size:173K  toshiba
3sk257.pdfpdf_icon

3SK256

3SK257 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK257 TV Tuner, VHF RF Amplifier Applications Unit mm FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. Low noise figure NF = 2.0dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 1

 9.2. Size:179K  toshiba
3sk258.pdfpdf_icon

3SK256

3SK258 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK258 TV Tuner, VHF RF Amplifier Applications Unit mm FM Tuner Applications Superior cross modulation performance. Low reverse transfer capacitance C = 0.015 pF (typ.) rss Low noise figure NF = 1.1dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Dra

 9.3. Size:174K  toshiba
3sk259.pdfpdf_icon

3SK256

3SK259 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK259 TV Tuner, UHF RF Amplifier Applications Unit mm TV Tuner VHF Wide Band RF Amplifier Applications Superior cross modulation performance. Low reverse transfer capacitance C = 0.025 pF (typ.) rss Low noise figure NF = 2.6dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characterist

Другие IGBT... 3N165, 3N166, 3SK199, 3SK207, 3SK225, 3SK226, 3SK232, 3SK249, AON6414A, 3SK257, 3SK258, 3SK259, 3SK260, 3SK291, 3SK292, 3SK293, 3SK294