2N5018 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N5018
Тип транзистора: JFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.05 A
Tjⓘ - Максимальная температура канала: 200 °C
trⓘ - Время нарастания: 20 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 75 Ohm
Тип корпуса: TO-18
2N5018 Datasheet (PDF)
2n5018 2n5019.pdf
2N5018 SERIES SINGLE P-CHANNEL Linear Integrated Systems JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75 TO-18ABSOLUTE MAXIMUM RATINGS1 BOTTOM VIEW@ 25 C (unless otherwise stated) Maximum Temperatures G 2 3 DStorage Temperature -55 to 200C Junction Operating Temperature -55 to 200C 1SMaximum Powe
2n5015.pdf
2N5015Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 1000V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100)
2n5013.pdf
2N5013Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 800V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n5014.pdf
2N5014MECHANICAL DATADimensions in mm (inches)SILICON EPITAXIAL NPN TRANSISTOR FEATURES General purpose power transistor for switch-ing and linear applications in a hermetic TO39 package.
2n5012.pdf
2N5012Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 700V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n5011.pdf
2N5011Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 600V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n5015x.pdf
2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE Dimensions in mm (inches) 8.51 (0.34)9.40 (0.37) SILICON EPITAXIAL 7.75 (0.305)8.51 (0.335)NPN TRANSISTOR6.10 (0.240)6.60 (0.260)0.89max.(0.035)38.00(1.5) FEATURES min. 0.41 (0.016)0.53 (0.021) SILICON PLANAR EPITAXIAL NPN TRANSISTOR dia. HIGH BREAKDOWN VOLTAGE LOW SATURATION VOLTAGE 5.08 (0.20
2n5011s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
2n5014s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
2n5015sx.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
2n5013s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
2n5012s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
2n5010s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918