2N3994A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N3994A
Тип транзистора: JFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 5.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.01 A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 300 Ohm
Тип корпуса: TO-72
2N3994A Datasheet (PDF)
2n3994-a.pdf
Databook.fxp 1/13/99 2:09 PM Page B-8B-8 01/992N3994, 2N3994AP-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C ChoppersReverse Gate Source Voltage 25 V High Speed CommutatorsReverse Gate Drain Voltage 25 VContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mWPower Derating 2.4 mW/CAt 25C free air
2n3996smd05.pdf
2N3996SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm
2n3996smd.pdf
2N3996SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n3999smd05.pdf
2N3999SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm
2n3998smd05.pdf
2N3998SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm
2n3999smd.pdf
2N3999SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n3998smd.pdf
2N3998SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n3997smd.pdf
2N3997SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n3997smd05.pdf
2N3997SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm
2n3993-a.pdf
Databook.fxp 1/13/99 2:09 PM Page B-701/99 B-72N3993, 2N3993AP-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C ChoppersReverse Gate Source & Reverse Gate Drain Voltage 25 V High Speed CommutatorsContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mWPower Derating 2.4 mW/CAt 25C free air temperature
2n3996-99.pdf
TECHNICAL DATA NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 Devices Qualified Level JAN 2N3996 2N3997 2N3998 2N3999 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Base Current I 0.5 Adc B 5.0 Collector Current IC Adc
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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