2N5462 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N5462
Тип транзистора: JFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 6 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.75 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.016 A
Tjⓘ - Максимальная температура канала: 150 °C
Тип корпуса: TO-92
2N5462 Datasheet (PDF)
2n5460 2n5461 2n5462.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5460/DJFET Amplifiers2N5460PChannel Depletion2 DRAINthru2N54623GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainGate Voltage VDG 40 VdcReverse GateSource Voltage VGSR 40 Vdc1Forward Gate Current IG(f) 10 mAdc23Total Device Dissipation @ TA = 25C PD 350 mWDerate above 25
2n5460 2n5461 2n5462 mmbf5460 mmbf5461 mmbf5462.pdf
2N5460 MMBF54602N5461 MMBF54612N5462 MMBF5462GSG TO-92 DSOT-23NOTE: Source & DrainSMark: 6E / 61U / 61V are interchangeableDP-Channel General Purpose AmplifierThis device is designed primarily for low level audio and generalpurpose applications with high impedance signal sources. Sourcedfrom Process 89.Absolute Maximum Ratings* TA = 25C unless otherwise noted-
2n5460 sst5460 2n5461 sst5461 2n5462 sst5462.pdf
2N/SST5460 SeriesVishay SiliconixP-Channel JFETs2N5460 SST54602N5461 SST54612N5462 SST5462PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N/SST5460 0.75 to 6 40 1 12N/SST5461 1 to 7.5 40 1.5 22N/SST5462 1.8 to 9 40 2 4FEATURES BENEFITS APPLICATIONSD High Input Impedance D Low Signal Loss/System Error D Low-Current, Low-Voltage
2n5460 2n5461 2n5462.pdf
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2n5460 2n5461 2n5462.pdf
2N5460, 2N5461, 2N5462JFET AmplifierP-Channel - DepletionFeatures Pb-Free Packages are Available*http://onsemi.com2 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain - Gate Voltage VDG 40 VdcGATEReverse Gate - Source Voltage VGSR 40 VdcForward Gate Current IG(f) 10 mAdc1 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above 25C 2.8 mW/CJunct
2n5468.pdf
2N5468Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n5469.pdf
2N5469Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n5467.pdf
2N5467Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 400V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n5468.pdf
isc Silicon NPN Power Transistor 2N5468DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular TO-66100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
2n5469.pdf
isc Silicon NPN Power Transistor 2N5469DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular TO-66100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
2n5468 2n5469.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5468 2N5469 DESCRIPTION With TO-66 package High-voltage capability Fast switching speeds Low saturation voltage APPLICATIONS They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66)
2n5466 2n5467.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5466 2N5467 DESCRIPTION With TO-3 package High-voltage capability Fast switching speeds Low collector saturation voltage APPLICATIONS They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
2n5467.pdf
isc Silicon NPN Power Transistor 2N5467DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
2n5466.pdf
isc Silicon NPN Power Transistor 2N5466DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918