Справочник MOSFET. 2N5462

 

2N5462 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2N5462
   Тип транзистора: JFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 6 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.75 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.016 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Тип корпуса: TO-92

 Аналог (замена) для 2N5462

 

 

2N5462 Datasheet (PDF)

 ..1. Size:116K  motorola
2n5460 2n5461 2n5462.pdf

2N5462
2N5462

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5460/DJFET Amplifiers2N5460PChannel Depletion2 DRAINthru2N54623GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainGate Voltage VDG 40 VdcReverse GateSource Voltage VGSR 40 Vdc1Forward Gate Current IG(f) 10 mAdc23Total Device Dissipation @ TA = 25C PD 350 mWDerate above 25

 ..2. Size:114K  fairchild semi
2n5460 2n5461 2n5462 mmbf5460 mmbf5461 mmbf5462.pdf

2N5462
2N5462

2N5460 MMBF54602N5461 MMBF54612N5462 MMBF5462GSG TO-92 DSOT-23NOTE: Source & DrainSMark: 6E / 61U / 61V are interchangeableDP-Channel General Purpose AmplifierThis device is designed primarily for low level audio and generalpurpose applications with high impedance signal sources. Sourcedfrom Process 89.Absolute Maximum Ratings* TA = 25C unless otherwise noted-

 ..3. Size:48K  vishay
2n5460 sst5460 2n5461 sst5461 2n5462 sst5462.pdf

2N5462
2N5462

2N/SST5460 SeriesVishay SiliconixP-Channel JFETs2N5460 SST54602N5461 SST54612N5462 SST5462PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N/SST5460 0.75 to 6 40 1 12N/SST5461 1 to 7.5 40 1.5 22N/SST5462 1.8 to 9 40 2 4FEATURES BENEFITS APPLICATIONSD High Input Impedance D Low Signal Loss/System Error D Low-Current, Low-Voltage

 ..4. Size:62K  central
2n5460 2n5461 2n5462.pdf

2N5462

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 ..5. Size:60K  onsemi
2n5460 2n5461 2n5462.pdf

2N5462
2N5462

2N5460, 2N5461, 2N5462JFET AmplifierP-Channel - DepletionFeatures Pb-Free Packages are Available*http://onsemi.com2 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain - Gate Voltage VDG 40 VdcGATEReverse Gate - Source Voltage VGSR 40 VdcForward Gate Current IG(f) 10 mAdc1 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above 25C 2.8 mW/CJunct

 9.1. Size:11K  semelab
2n5468.pdf

2N5462

2N5468Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 9.2. Size:11K  semelab
2n5469.pdf

2N5462

2N5469Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 9.3. Size:11K  semelab
2n5467.pdf

2N5462

2N5467Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 400V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

 9.4. Size:184K  inchange semiconductor
2n5468.pdf

2N5462
2N5462

isc Silicon NPN Power Transistor 2N5468DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular TO-66100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 9.5. Size:184K  inchange semiconductor
2n5469.pdf

2N5462
2N5462

isc Silicon NPN Power Transistor 2N5469DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular TO-66100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 9.6. Size:129K  inchange semiconductor
2n5468 2n5469.pdf

2N5462
2N5462

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5468 2N5469 DESCRIPTION With TO-66 package High-voltage capability Fast switching speeds Low saturation voltage APPLICATIONS They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66)

 9.7. Size:130K  inchange semiconductor
2n5466 2n5467.pdf

2N5462
2N5462

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5466 2N5467 DESCRIPTION With TO-3 package High-voltage capability Fast switching speeds Low collector saturation voltage APPLICATIONS They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin

 9.8. Size:182K  inchange semiconductor
2n5467.pdf

2N5462
2N5462

isc Silicon NPN Power Transistor 2N5467DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 9.9. Size:182K  inchange semiconductor
2n5466.pdf

2N5462
2N5462

isc Silicon NPN Power Transistor 2N5466DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

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