Справочник MOSFET. 2N5639

 

2N5639 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N5639

Тип транзистора: JFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 1.35 W

Предельно допустимое напряжение сток-исток |Uds|: 30 V

Максимально допустимый постоянный ток стока |Id|: 0.025 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 8 ns

Сопротивление сток-исток открытого транзистора (Rds): 60 Ohm

Тип корпуса: TO-92

Аналог (замена) для 2N5639

 

 

2N5639 Datasheet (PDF)

0.1. 2n5639.pdf Size:26K _fairchild_semi

2N5639
2N5639

2N5639N-Channel Switch This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 50 mA

0.2. 2n5638 2n5639.pdf Size:51K _onsemi

2N5639
2N5639

2N5638, 2N56392N5638 is a Preferred DeviceJFET Chopper TransistorsN-Channel - DepletionN-Channel Junction Field Effect Transistors, depletion mode(Type A) designed for chopper and high-speed switching applications.Featureshttp://onsemi.com Low Drain-Source ON Resistance: RDS(on) = 30W for 2N5638RDS(on) = 60W for 2N56391 DRAIN Low Reverse Transfer Capacitance -

 9.1. 2n5630 2n6030 2n5631 2n6031.pdf Size:253K _motorola

2N5639
2N5639

Order this documentMOTOROLAby 2N5630/DSEMICONDUCTOR TECHNICAL DATANPN2N5630High-Voltage High Power2N5631TransistorsPNP. . . designed for use in high power audio amplifier applicat

9.2. 2n5638.pdf Size:26K _fairchild_semi

2N5639
2N5639

2N5638N-Channel Switch This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 50 mA

 9.3. 2n5629 2n5630 2n6029 2n6030.pdf Size:67K _central

2N5639

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.4. 2n5631-d.pdf Size:198K _onsemi

2N5639
2N5639

2N5631High-Voltage - High PowerTransistorsHigh-voltage - high power transistors designed for use in highpower audio amplifier applications and high voltage switchingregulator circuits.http://onsemi.com High Collector Emitter Sustaining Voltage -VCEO(sus) = 140 Vdc16 AMPERE High DC Current Gain - @ IC = 8.0 AdchFE = 15 (Min)POWER TRANSISTORS Low Collector-Emitt

 9.5. 2n5632.pdf Size:11K _semelab

2N5639

2N5632Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.6. 2n5633.pdf Size:11K _semelab

2N5639

2N5633Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

9.7. 2n5634.pdf Size:11K _semelab

2N5639

2N5634Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 140V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.8. 2n5629 2n5630.pdf Size:118K _jmnic

2N5639
2N5639

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION With TO-3 package Complement to type 2N6029 2N6030 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbolAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIO

9.9. 2n5632 2n5633 2n5634.pdf Size:103K _jmnic

2N5639
2N5639

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbolAbsolute maximum ratings(Ta=) SY

9.10. 2n5631.pdf Size:99K _jmnic

2N5639
2N5639

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5631 DESCRIPTION With TO-3 package Complement to type 2N6031 High collector-emitter sustaining voltage High DC current gain Low collector-emitter saturation voltage APPLICATIONS For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESCRIPTION

9.11. 2n5629 2n5630.pdf Size:118K _inchange_semiconductor

2N5639
2N5639

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION With TO-3 package Complement to type 2N6029 2N6030 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE

9.12. 2n5632 2n5633 2n5634.pdf Size:117K _inchange_semiconductor

2N5639
2N5639

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute m

9.13. 2n5631.pdf Size:117K _inchange_semiconductor

2N5639
2N5639

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5631 DESCRIPTION With TO-3 package Complement to type 2N6031 High collector-emitter sustaining voltage High DC current gain@IC=8A Low collector saturation voltage APPLICATIONS For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESC

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