Справочник MOSFET. MMBF5457

 

MMBF5457 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMBF5457
   Маркировка: 6D
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 6 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.005 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Тип корпуса: SOT-23

 Аналог (замена) для MMBF5457

 

 

MMBF5457 Datasheet (PDF)

 ..1. Size:129K  fairchild semi
2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf

MMBF5457
MMBF5457

2N5457 MMBF54572N5458 MMBF54582N5459 MMBF5459GSTO-92GSSOT-23NOTE: Source & DrainDD are interchangeableMark: 6D / 61S / 6LN-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess 55.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

 0.1. Size:103K  motorola
mmbf5457lt1rev0d.pdf

MMBF5457
MMBF5457

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF5457LT1/DJFET General PurposeMMBF5457LT1TransistorNChannel2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating Symbol Value Unit CASE 31808, STYLE 10SOT23 (TO236AB)DrainSource Voltage VDS 25 VdcDrainGate Voltage VDG 25 VdcReverse GateSource Voltage VGS(r) 25 VdcGate Current IG 10

 0.2. Size:55K  onsemi
mmbf5457lt1-d.pdf

MMBF5457
MMBF5457

MMBF5457LT1Preferred Device JFET - General Purpose TransistorN-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Source Voltage VDS 25 Vdc1 DRAINDrain-Gate Voltage VDG 25 VdcReverse Gate-Source Voltage VGS(r) -25 VdcGate Current IG 10 mAdcTHERMAL CHARACTERISTICS 3SOT-23 (TO-236)Charac

 8.1. Size:294K  motorola
mmbf5484lt1rev0d.pdf

MMBF5457
MMBF5457

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF5484LT1/DJFET TransistorNChannelMMBF5484LT12 SOURCEMotorola Preferred Device3GATE1 DRAIN3MAXIMUM RATINGSRating Symbol Value Unit12DrainGate Voltage VDG 25 VdcReverse GateSource Voltage VGS(r) 25 VdcCASE 31808, STYLE 10Forward Gate Current IG(f) 10 mAdcSOT23 (TO236AB)Contin

 8.2. Size:357K  fairchild semi
2n5484 2n5485 2n5486 mmbf5484 mmbf5485 mmbf5486.pdf

MMBF5457
MMBF5457

February 20092N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007

 8.3. Size:754K  fairchild semi
2n5484 mmbf5484.pdf

MMBF5457
MMBF5457

2N5484 MMBF54842N5485 MMBF54852N5486 MMBF5486GSG TO-92SSOT-23 DDMark: 6B / 6M / 6HNOTE: Source & Drain are interchangeableN-Channel RF AmplifierThis device is designed primarily for electronic switchingapplications such as low On Resistance analog switching.Sourced from Process 50.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value

 8.4. Size:114K  fairchild semi
2n5460 2n5461 2n5462 mmbf5460 mmbf5461 mmbf5462.pdf

MMBF5457
MMBF5457

2N5460 MMBF54602N5461 MMBF54612N5462 MMBF5462GSG TO-92 DSOT-23NOTE: Source & DrainSMark: 6E / 61U / 61V are interchangeableDP-Channel General Purpose AmplifierThis device is designed primarily for low level audio and generalpurpose applications with high impedance signal sources. Sourcedfrom Process 89.Absolute Maximum Ratings* TA = 25C unless otherwise noted-

 8.5. Size:73K  fairchild semi
mmbf5434.pdf

MMBF5457
MMBF5457

MMBF5434N-Channel Switch This device is designed for digital switching 3applications where very low on resistance is mandatory. Sourced from Process 58.2SuperSOT-31Marking: 61Z1. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltage -25 VIGF Forward Gat

 8.6. Size:148K  onsemi
mmbf5484lt1.pdf

MMBF5457
MMBF5457

MMBF5484LT1Preferred Device JFET TransistorN-ChannelFeatures Pb-Free Package is Availablehttp://onsemi.comMAXIMUM RATINGS2 SOURCERating Symbol Value UnitDrain-Gate Voltage VDG 25 Vdc3GATEReverse Gate-Source Voltage VGS(r) 25 VdcForward Gate Current IG(f) 10 mAdcContinuous Device Dissipation at or Below PD1 DRAINTC = 25C 200 mWLinear Derating Factor 2.8 m

 8.7. Size:60K  onsemi
mmbf5460lt1-d.pdf

MMBF5457
MMBF5457

MMBF5460LT1JFET - General PurposeTransistorP-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCEMAXIMUM RATINGS3Rating Symbol Value UnitGATEDrain-Gate Voltage VDG 40 VdcReverse Gate-Source Voltage VGSR 40 Vdc1 DRAINForward Gate Current IGF 10 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit3Total Device Dissipation FR-5 Board,

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History: MMBT7002

 

 
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