VN10KM - описание и поиск аналогов

VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Zener Diode Input Protected D Extra ESD Protection D Drivers Rel

VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Zener Diode Input Protected D Extra ESD Protection D Drivers Rel

VN10KC New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 FEATURES BENEFITS APPLICATIONS D Zener Diode Input Protected D Extra ESD Protection D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Low On-Resistance 3 W D Low Offset Voltage D Batt

Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes a Free from secondary breakdown vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power

VN10KCSM4

N-CHANNEL ENHANCEMENT MODE MOSFET VN10K Low RDS(on), VGS(th), CISS And Fast Switching Speeds Hermetic TO-18 Metal package. Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc..) Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VDS Drain Source Voltage 60V VGS G