Справочник MOSFET. SMK0965FC

 

SMK0965FC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SMK0965FC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 69 ns
   Cossⓘ - Выходная емкость: 153 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для SMK0965FC

 

 

SMK0965FC Datasheet (PDF)

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 smk0965fc.pdf

SMK0965FC SMK0965FC

SMK0965FCAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=650V(Min.) D Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85(Max.) G Ordering Information Type No. Marking Package Code G D S S TO-220F-3L SMK0965FC SMK0965TO-220F-3L (C Forming) Marki

 6.1. Size:742K  auk
 smk0965f.pdf

SMK0965FC SMK0965FC

SMK0965F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage : BV =650V(Min.) DSS Low C : C =16pF(Typ.) rss rss Low gate charge : Qg=35nC(Typ.) Low R : R =0.85(Max.) DS(on) DS(on)G D S Ordering Information Part Number Marking Package TO-220F-3L SMK0965F SMK0965 TO-220F-3L Marking Diagram AUK = Manufacture Logo

 6.2. Size:408K  auk
 smk0965fj.pdf

SMK0965FC SMK0965FC

SMK0965FJAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=650V(Min.) D Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85(Max.) G Ordering Information G Type No. Marking Package Code D S S TO-220F-3L SMK0965FJ SMK0965TO-220F-3L (J Forming) Ma

 9.1. Size:574K  auk
 smk0990ci.pdf

SMK0965FC SMK0965FC

SMK0990CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =900V (Min.) DSS Low gate charge: Q =52nC (Typ.) g Low drain-source On resistance: R =1.4 (Max.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-3P Part Number Marking Package SMK0990CI SMK0990 TO-3P

 9.2. Size:571K  auk
 smk0990fd.pdf

SMK0965FC SMK0965FC

SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =900V DSS Low gate charge: Q =52nC (Typ.) g Low drain-source On resistance: R =1.4 (Max.) DS(on) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SMK0990FD SMK0990 TO-220F-

 9.3. Size:236K  inchange semiconductor
 smk0990ci.pdf

SMK0965FC SMK0965FC

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SMK0990CIFEATURESNew revolutionary high voltage technologyWith TO-3PN packageDrain-Source breakdown voltage:BV =900V(Min.)DSSLow drain-source On resistance: R (on)=1.4 (Max.)DS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch

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