Справочник MOSFET. SMN0470F

 

SMN0470F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SMN0470F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 29 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 73 ns
   Cossⓘ - Выходная емкость: 65 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.36 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для SMN0470F

   - подбор ⓘ MOSFET транзистора по параметрам

 

SMN0470F Datasheet (PDF)

 ..1. Size:573K  auk
smn0470f.pdfpdf_icon

SMN0470F

SMN0470F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =700V (Min.) DSS Low gate charge: Q =13nC (Typ.) g Low drain-source On resistance: R =2.36 (Max.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SMN0470F SMN0470 TO

 9.1. Size:233K  philips
psmn045-80ys.pdfpdf_icon

SMN0470F

PSMN045-80YSN-channel LFPAK 80 V 45 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 9.2. Size:87K  philips
psmn040-200w.pdfpdf_icon

SMN0470F

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 50 AgRDS(ON) 40 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil

 9.3. Size:347K  nxp
psmn040-100mse.pdfpdf_icon

SMN0470F

PSMN040-100MSEN-channel 100 V 36.6 m standard level MOSFET in LFPAK33designed specifically for high power PoE applications26 March 2013 Product data sheet1. General descriptionNew standards and proprietary approaches are enabling Power-over-Ethernet (PoE)systems capable of delivering up to 90W to each powered device (PD). Such solutionsplace increased demands on the power sourci

Другие MOSFET... SMK830FC , SMK830FZ , SMK830P , SMN01L20Q , SMN01Z30Q , SMN0250F , SMN03T80F , SMN03T80IS , IRFZ24N , SMN04L20D , SMN04L20IS , SMN0665F , SMN09L20D , SMN18T50FD , SMNY2Z30 , STK0170 , STK0380D .

History: CEPF630 | HSM4103 | IRFR9024PBF

 

 
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