SMN04L20IS - описание и поиск аналогов

SM L20IS MN04L S Logic Le ower MOSFE evel N-Ch Po ET 200V LOGIC N-Chan nnel MOSFET Fe eatures Drain-Sour own voltage 0V (Min.) rce breakdo e BVDSS=200 Low gate c charge Qg=4nC (Typ.) Low drain- RDS(on)=1.35 (Max.) -source On-Resistance 100% avala anche tested RoHS comp ce pliant devic Or nformatio rdering In on G D S Part Num Marking P

SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage BVDSS=200V (Min.) Low gate charge Qg=4nC (Typ.) D Low drain-source On-Resistance RDS(on)=1.35 (Max.) 100% avalanche tested RoHS compliant device G Ordering Information S Part Number Marking Package TO-252 SMN04L20D SMN04L20 TO-252

PSMN045-80YS N-channel LFPAK 80 V 45 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 50 A g RDS(ON) 40 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

PSMN040-100MSE N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourci

PSMN041-80YL N-channel 80 V 41 m logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due

SMN0470F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage BV =700V (Min.) DSS Low gate charge Q =13nC (Typ.) g Low drain-source On resistance R =2.36 (Max.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SMN0470F SMN0470 TO