SM L20ISMN04L S Logic Le ower MOSFEevel N-Ch Po ET 200V LOGIC N-Channnel MOSFET Feeatures Drain-Sour own voltage 0V (Min.) rce breakdo e: BVDSS=200 Low gate ccharge: Qg=4nC (Typ.) Low drain- : RDS(on)=1.35 (Max.) -source On-Resistance: 100% avalaanche tested RoHS comp ce pliant devicOr nformatiordering In on G D S Part Num Marking P

SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage: BVDSS=200V (Min.) Low gate charge: Qg=4nC (Typ.) D Low drain-source On-Resistance: RDS(on)=1.35 (Max.) 100% avalanche tested RoHS compliant device G Ordering Information S Part Number Marking Package TO-252 SMN04L20D SMN04L20 TO-252

PSMN045-80YSN-channel LFPAK 80 V 45 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 50 AgRDS(ON) 40 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil

PSMN040-100MSEN-channel 100 V 36.6 m standard level MOSFET in LFPAK33designed specifically for high power PoE applications26 March 2013 Product data sheet1. General descriptionNew standards and proprietary approaches are enabling Power-over-Ethernet (PoE)systems capable of delivering up to 90W to each powered device (PD). Such solutionsplace increased demands on the power sourci

PSMN041-80YLN-channel 80 V 41 m logic level MOSFET in LFPAK561 May 2013 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) inLFPAK56 package. This product has been designed and qualified for use in a wide rangeof industrial, communications and domestic equipment.2. Features and benefits High efficiency due

SMN0470F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =700V (Min.) DSS Low gate charge: Q =13nC (Typ.) g Low drain-source On resistance: R =2.36 (Max.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SMN0470F SMN0470 TO