Справочник MOSFET. SUN0760I2

 

SUN0760I2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SUN0760I2
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 110 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 7 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 33 ns
   Выходная емкость (Cd): 93 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.2 Ohm
   Тип корпуса: I2-PAK

 Аналог (замена) для SUN0760I2

 

 

SUN0760I2 Datasheet (PDF)

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sun0760i2.pdf

SUN0760I2
SUN0760I2

SUN0760I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.05 (Typ.) Low gate charge: Qg=18nC (Typ.) Low reverse transfer capacitance: Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN0760I2 SUN0760 I2-P

 7.1. Size:519K  auk
sun0760f.pdf

SUN0760I2
SUN0760I2

SUN0760F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.05 (Typ.) Low gate charge: Qg=18nC (Typ.) Low reverse transfer capacitance: Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0760F SUN0760 TO

 8.1. Size:514K  auk
sun0765f.pdf

SUN0760I2
SUN0760I2

SUN0765F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.1 (Typ.) Low gate charge: Qg=18nC (Typ.) Low reverse transfer capacitance: Crss=5.5pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0765F SUN0765 TO

 8.2. Size:461K  auk
sun0765i2.pdf

SUN0760I2
SUN0760I2

SUN0765I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.1 (Typ.) Low gate charge: Qg=18nC (Typ.) Low reverse transfer capacitance: Crss=5.5pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN0765I2 SUN0765 I2-PA

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STB25NM60N-1

 

 
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