UNISONIC TECHNOLOGIES CO., LTD 11N90 Power MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can w

QFETFQAF11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fa

September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi

FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching

September 2007 QFETFQA11N90C_F109900V N-Channel MOSFETFeatures Description 11A, 900V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 23pF)This advanced technology has been especially tailored

September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi

September 2000TMQFETQFETQFETQFETFQAF11N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.2A, 900V, RDS(on) = 0.96 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 72 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has

FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching

FQA11N90-F109N-Channel QFET MOSFET 900 V, 11.4 A, 960 mDescriptionThis N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar stripe 11.4 A, 900 V, RDS(on) = 960 m (Max.) @ VGS = 10 V,and DMOS technology. This advanced MOSFET technology ID = 5.7 Ahas been especially tailored to reduce on-state resistance, Low

FMR11N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.00.5V)H

FMH11N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.00.5V)

FMV11N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.00.

N RN-CHANNEL MOSFET JCS11N90T MAIN CHARACTERISTICS Package ID 11 A VDSS 900 V Rdson-max1.10 Vgs=10V Qg-typ 66nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

MSW11N90 900V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Max 1.1 )@VGS=10V Gate Charge (Typical 70nC) Improved dv/dt Capability, High Ruggedness

Dec 2005BVDSS = 900 VRDS(on) typ HFH11N90ID = 11 A900V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A

TMAN11N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 11A

nvertSuzhou Convert Semiconductor Co ., Ltd.CS11N90V, CS11N90VF900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS11N90V TO-3P CS11N90VCS

FIR11N90ANG900V N-Channel MOSFET PIN Connection TO-3PFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge: Qg= 60nC (Typ.). BVDSS=900V,ID=11A RDS(on) : 1.1 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly Location

isc N-Channel MOSFET Transistor FQA11N90FEATURESDrain Current : I = 11.4A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 0.96(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.