Справочник MOSFET. 10N80

 

10N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 10N80

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 240 W

Предельно допустимое напряжение сток-исток |Uds|: 800 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Максимально допустимый постоянный ток стока |Id|: 10 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 130 ns

Выходная емкость (Cd): 130 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.9 Ohm

Тип корпуса: TO-3P TO-230 TO-220F2

Аналог (замена) для 10N80

 

 

10N80 Datasheet (PDF)

0.1. ssh10n80a.pdf Size:256K _1

10N80
10N80

N-CHANNEL POWER MOSFET SSH10N80AFEATURESBVDSS = 800V Avalanche Rugged TechnologyRDS(ON) = 0.95 Rugged Gate Oxide TechnologyID = 10A Lower Input Capacitance Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current: 25A (Max.) @ VDS = 800V Lower RDS(ON): 0.746 (Typ.)1231. Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RAT

0.2. stf10n80k5.pdf Size:571K _st

10N80
10N80

STF10N80K5N-channel 800 V, 0.470 typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID PTOTSTF10N80K5 800 V 0.600 9 A 30 W Industrys best RDS(on)32 Industrys best figure of merit (FoM)1 Ultra-low gate chargeTO-220FP 100% avalanche tested Zener-protectedApplicationsF

 0.3. fqa10n80.pdf Size:675K _fairchild_semi

10N80
10N80

September 2000TMQFETFQA10N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.8A, 800V, RDS(on) = 1.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tail

0.4. fqaf10n80.pdf Size:700K _fairchild_semi

10N80
10N80

TMQFETFQAF10N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.7A, 800V, RDS(on) = 1.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to Fa

 0.5. fqa10n80c f109.pdf Size:806K _fairchild_semi

10N80
10N80

August 2007 QFETFQA10N80C_F109800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

0.6. fdbl0210n80.pdf Size:379K _fairchild_semi

10N80
10N80

April 2015FDBL0210N80N-Channel PowerTrench MOSFET80 V, 240 A, 2.0 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automations Battery Operated toolsS Battery ProtectionForcurrentpackaged

0.7. fqa10n80c.pdf Size:800K _fairchild_semi

10N80
10N80

September 2006 QFETFQA10N80C800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

0.8. ssh10n80a.pdf Size:211K _samsung

10N80
10N80

SSH10N80AAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

0.9. ssf10n80a.pdf Size:577K _samsung

10N80
10N80

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 0.746 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

0.10. ssh10n70 ssh10n80.pdf Size:294K _samsung

10N80
10N80

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

0.11. 10n80.pdf Size:225K _utc

10N80
10N80

UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTCs advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

0.12. fmv10n80e.pdf Size:364K _fuji

10N80
10N80

http://www.fujielectric.com/products/semiconductor/FMV10N80E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingG

0.13. ssh10n80.pdf Size:263K _semelab

10N80
10N80

0.14. tsm10n80ci tsm10n80cz.pdf Size:419K _taiwansemi

10N80
10N80

TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 1.05 @ VGS =10V 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr

0.15. g10n80bf.pdf Size:1442K _goford

10N80
10N80

GOFORDG10N80BFN-Channel MOSFET VDSS RDS(on)(Typ) ID (Max) 800V 0.8 10AApplications: ATX Power LCD Panel Power Features: G RoHS Compliant & Halogen Free DS TO-220F Low ON Resistance PackagesNot to Scale Low Gate Charge ESD Capability Improved Absolute Maximum Ratings Tc= 25 unless otherwise specified Symbol Parameter TO-220F UnitsVDSS Dra

0.16. brf10n80.pdf Size:869K _blue-rocket-elect

10N80
10N80

BRF10N80(BRCS10N80FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited f

0.17. 10n80af 10n80b.pdf Size:323K _nell

10N80
10N80

RoHS 10N80 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET10A, 800VoltsDESCRIPTIOND The Nell 10N80 is a three-terminal silicon devicewith current conduction capability of 10A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 800V, and max. threshold voltage of 5 volts. They are designed for use in applications such as G

0.18. cs10n80f a9d.pdf Size:546K _crhj

10N80
10N80

Silicon N-Channel Power MOSFET R CS10N80F A9D General Description VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.19. cs10n80 and.pdf Size:304K _crhj

10N80
10N80

Silicon N-Channel Power MOSFET R CS10N80 AND General Description VDSS 800 V CS10N80 AND, the silicon N-channel Enhanced ID 10 A PD(TC=25) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

0.20. cs10n80 a8d.pdf Size:547K _crhj

10N80
10N80

Silicon N-Channel Power MOSFET R CS10N80 A8D General Description VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

0.21. cm10n80p.pdf Size:124K _jdsemi

10N80
10N80

RC1N0M08P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 121 233

0.22. msf10n80.pdf Size:841K _bruckewell

10N80
10N80

MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Techn

0.23. msw10n80.pdf Size:412K _bruckewell

10N80
10N80

Preliminary MSW10N80 800V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (typ 0.65 )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ru

0.24. ms10n80.pdf Size:977K _bruckewell

10N80
10N80

MS10N80 800V N-Channel MOSFET Description The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic

0.25. msf10n80a.pdf Size:1058K _bruckewell

10N80
10N80

MSF10N80A 800V N-Channel MOSFET Description The MSF10N80A is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Int

0.26. fhf10n80a.pdf Size:928K _feihonltd

10N80
10N80

N N-CHANNEL MOSFET FHF10N80A MAIN CHARACTERISTICS FEATURES ID 10A Low gate charge VDSS 800V Crss ( 20pF) Low Crss (typical 20pF ) Rdson-typ @Vgs=10V 0.72 Fast switching Qg-typ 58nC 100% 100% avalanche tested dv/dt Improved dv/d

0.27. hfh10n80.pdf Size:207K _semihow

10N80
10N80

Dec 2005BVDSS = 800 VRDS(on) typ = 0.92 HFH10N80ID = 10 A800V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Unrivalled Gate Charge : 58 nC (Typ ) Exte

0.28. hfs10n80.pdf Size:210K _semihow

10N80
10N80

Dec 2010BVDSS = 800 VRDS(on) typ = 0.92 HFS10N80ID = 9.4 A800V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Unrivalled Gate Charge : 58 nC (Typ ) E

0.29. hfp10n80.pdf Size:207K _semihow

10N80
10N80

Dec 2010BVDSS = 800 VRDS(on) typ HFP10N80ID = 9.4 A800V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Low

0.30. tmp10n80 tmpf10n80.pdf Size:609K _trinnotech

10N80
10N80

TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N80 / TMPF10N80 TO-220 / TO-220F TMP10N80 / TMPF10N80 RoHS TMP10N

0.31. tman10n80.pdf Size:493K _trinnotech

10N80
10N80

TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-

0.32. cs10n80a8d.pdf Size:544K _wuxi_china

10N80
10N80

Silicon N-Channel Power MOSFET R CS10N80 A8D General Description VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

0.33. cs10n80fa9d.pdf Size:544K _wuxi_china

10N80
10N80

Silicon N-Channel Power MOSFET R CS10N80F A9D General Description VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.34. cs10n80f cs10n80p cs10n80v cs10n80w.pdf Size:804K _convert

10N80
10N80

nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N80F, CS10N80P,CS10N80V,CS10N80W800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N80F T

0.35. 10n80.pdf Size:252K _inchange_semiconductor

10N80
10N80

isc N-Channel MOSFET Transistor 10N80FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use a load switch or in PWM applications.ABSOLUTE MAX

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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