4N70 - описание и поиск аналогов

UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor control

isc N-Channel Mosfet Transistor 4N70 FEATURES Low R = 2.5 (MAX) DS(on) Improved Gate Charge Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching mode power supplies DC-DC & DC-AC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 700 V

UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 1 1 time, low gate charge, low on-state resistance and high rugged TO-252 avalanche. This high speed switching power MOSFET is usually TO-220

UNISONIC TECHNOLOGIES CO., LTD 4N70K-MT Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor

UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor contr

UNISONIC TECHNOLOGIES CO., LTD 4N70K-MT Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor

AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan

AP04N70BI-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID4 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and silicon process technology to achieve the l

AP04N70BI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

AP04N70BS-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description AP04N70 series are specially designed as main switching devices for G D S TO-263(S) universal 90 265VAC

AP04N70BP-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description AP04N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. TO-220 type

AP04N70BS-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and G D S TO-263(S) silicon process technology

AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N70C N- MOS / N-CHANNEL POWER MOSFET SIF4N70C N

N R N-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 700 V Rdson-max 2.8 @Vgs=10V Qg-typ 16nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS T0-251N-S2 FEA

N R N-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A 700 V VDSS Rdson-max 2.8 Vgs=10V 16nC Qg-Typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

Spec. No. C797I3 Issued Date 2010.03.29 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 700V RDS(ON) 3.0 (typ.) MTN4N70I3 ID 4A Description The MTN4N70I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

BRI4N70 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features , Low thermal resistance, fast switching. / Applications For Electronic transformer, Switch mode power supply. / Eq

BRF4N70 Rev.D Oct.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , Low thermal resistance, fast switching. / Applications For Electronic transformer, Switch mode power supply. /

BRD4N70 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications These devices are well suited for po

BR4N70 Rev. F Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Low thermal resistance, fast switching. / Applications For Electronic transformer, Switch mode power supply. / Eq

Silicon N-Channel Power MOSFET R CS4N70 A4HD General Description VDSS 700 V CS4N70 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS4N70 ARHD General Description VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS4N70 A3D General Description VDSS 700 V CS4N70 A3D, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Silicon N-Channel Power MOSFET R CS4N70 A3HD-G General Description VDSS 700 V CS4N70 A3HD-G, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Silicon N-Channel Power MOSFET R CS4N70F A9D General Description VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

SEMICONDUCTOR FTK4N70P/F/I/D TECHNICAL DATA 4 Amps, 700 Volt Power MOSFET N-CHANNEL POWER MOSFET I 1 TO - 251 DESCRIPTION D 1 TO - 252 The FTK4N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche P characteristics. This power MOSFET is usually used

F4N70 4A 700V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 700V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard.TO-220F provides insulation voltage rated at 2000V RMS R DS(on) TYP)

D4N70 4A 700V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 700V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) = 2.55 2 Features Fast switching ESD impr

SMD Type MOSFET N-Channel Enhancement MOSFET NDT4N70 TO-252 Unit mm Features + 0.15 6.50- 0.15 + 0.1 2.30- 0.1 + 0.2 5.30- 0.2 +0.8 0.50 -0.7 VDS (V) = 700V ID = 4.2 A (VGS = 10V) RDS(ON) 2.15 (VGS = 10V) 2.Drain 0.127 +0.1 0.80-0.1 max +0.1 1.Gate 2.3 0.60-0.1 1Gate +0.15 4.60-0.15 2Drain 3Source 3.Source Absolute Maximum Ratings Ta =

SVF4N70MJ 4A 700V N 2 SVF4N70MJ N MOS F-CellTM VDMOS 1 3

HY4N70T / HY4N70FT 700V / 4A 700V, RDS(ON)=2.8W@VGS=10V, ID=2A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1

SINGLE FIG.SINGLE CURVE FIG. 2 NON- T1 FORWARD CURRENT AMBIENT 1 2MAXIMUM5 10 1 25 50 PHASE HALF WAVE 60Hz ( ) 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125 HY4N70D / HY4N70M 700V / 4A 700V, RDS(ON)=2.8W@VGS=10V, ID=2A N-Channel Enhancement Mode MOSFET Features TO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

SAMWIN SW4N70K N-channel TO-251,TO-252 MOSFET TO-251 TO-252 Features BVDSS 700V ID 4A High ruggedness RDS(ON) (Max1.3 )@VGS=10V RDS(ON) 1.3 Gate Charge (Typical 13nC) 1 Improved dv/dt Capability 1 2 2 3 3 100% Avalanche Tested 2 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

SW4N70D1 N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2/TO-220F MOSFET Features TO-220F TO-251S TO-251N TO-251N-S2 BVDSS 700V ID 4A High ruggedness Low RDS(ON) (Typ 2.1 )@VGS=10V RDS(ON) 2.1 Low Gate Charge (Typ 18nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application Adapter,LED,Charger 3 3 3 3 1 1. Gate

SAMWIN SW4N70B N-channel TO-220F /I-PAK MOSFET BVDSS 700V Features TO-220F TO-251 ID 4.0A High ruggedness RDS(ON) 2.8 RDS(ON) (Max 2.8 )@VGS=10V Gate Charge (Typ 12nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced

SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 700V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.15 )@VGS=10V RDS(ON) 1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S

SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 700V ID 4A High ruggedness Low RDS(ON) (Typ 0.8 )@VGS=10V RDS(ON) 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour

SW4N70K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 700V High ruggedness ID 4A Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Charger,LED, Adaptor 3 3 3 1. Gate 2. Drain 3. Source 1 3 G

Datasheet 4A, 700V, N-Channel Power MOSFET SRM4N70 General Description Symbol The Sanrise SRM4N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a

SSM04N70BGF-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM04N70BGF-A achieves fast switching performance BVDSS 650V with low gate charge without a complex drive circuit. It RDS(ON) 2.4 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 4A D Pb-free; RoHS-compliant TO-220FM The SSM04N7

SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM04N70BGF-H achieves fast switching performance BVDSS 700V with low gate charge without a complex drive circuit. It RDS(ON) 2.4 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 4A D Pb-free; RoHS-compliant TO-220FM The SSM04N7

SSM04N70BGP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM04N70BGP-A achieves fast switching performance BVDSS 650V with low gate charge without a complex drive circuit. It RDS(ON) 2.4 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 4A D Pb-free; RoHS-compliant TO-220 The SSM04N70B

WML1 MM14N70C 14N70C4, WMK14N70C4, WM C4 WMN14N70C4, WMP14N70C4, WM C4 MO14N70C 700V n Power MOSFET V 0.33 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4

Silicon N-Channel Power MOSFET R CS4N70 ARHD General Description VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS4N70F A9D General Description VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS4N70F A9R General Description VDSS 700 V CS4N70F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.55 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N70F,CS4N70P,CS4N70U,CS4N70D 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N70F TO-220F

FIR4N70FG 700V N-Channel MOSFET PIN Connection TO-220F General Description the silicon N-channel Enhanced FG FIR4N70 VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system G D S miniaturizat

HMS4N70,HMS4N70D,HMS4N70F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON)TYP. 1200 m gate charge. This super junction MOSFET fits the industry s ID 4 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

HMS4N70K,HMS4N70I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DS technology and design to provide excellent RDS(ON) with low RDS(ON)TYP. 1200 m gate charge. This super junction MOSFET fits the industry s ID 4 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

General Description VDSS 700 V HM4N70F the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and

MPVX4N70F Series Power MOSFET MPSW60M041 FEATURES APPLICATIONS l BVDSS 700V, ID=4A l Switch Mode Power Supply (SMPS) l RDS(on) 3.5 (Max) @VGS=10V l Uninterruptible Power Supply (UPS) l Very Low FOM (RDS(on) *Qg) l Power Factor Correction (PFC) l Excellent stability and uniformity l AC to DC Converters D G TO-220F TO-251 TO-252 S Ordering Information Type NO. Marking Pack