2N7002ZT. Аналоги и основные параметры

Наименование производителя: 2N7002ZT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 10 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 13.5 Ohm

Тип корпуса: SOT-523

Аналог (замена) для 2N7002ZT

- подборⓘ MOSFET транзистора по параметрам

 

2N7002ZT даташит

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 2n7002zt.pdf pdf_icon

2N7002ZT

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS

 7.1. Size:172K  utc
 2n7002zdwg-al6-r.pdf pdf_icon

2N7002ZT

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance

 7.2. Size:171K  utc
 2n7002zdw.pdf pdf_icon

2N7002ZT

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CR

 7.3. Size:178K  utc
 2n7002z.pdf pdf_icon

2N7002ZT

UNISONIC TECHNOLOGIES CO., LTD 2N7002Z Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... 18N25, UF2N30, 10N30, 12N30, UF3205, 2N7000Z, 2N7002LL, 2N7002Z, 8N60, UF3055, UTD3055, 12N06, 12N06Z, 15N06, 12N10, 15N20, 19N10