Справочник MOSFET. 75N75

 

75N75 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 75N75

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 300 W

Предельно допустимое напряжение сток-исток (Uds): 75 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 80 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 208 ns

Выходная емкость (Cd): 773 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0095 Ohm

Тип корпуса: TO-220, TO-220F1, TO-220F, TO-263

Аналог (замена) для 75N75

 

 

75N75 Datasheet (PDF)

1.1. st75n75.pdf Size:674K _upd

75N75
75N75

 ST75N75 N Channel Enhancement Mode MOSFET 75.0A DESCRIPTION ST75N75 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION FEATURE TO220-3L 75V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-r

1.2. stp75n75f4.pdf Size:479K _upd

75N75
75N75

STP75N75F4 N-channel 75 V, 0.0092 Ω typ., 78 A STripFET™ DeepGATE™ Power MOSFET in a TO-220 package Datasheet — production data Features TAB Type VDSS RDS(on) max ID STP75N75F4 75 V < 0.011 Ω 78 A ■ N-channel enhancement mode 3 ■ 100% avalanched rated 2 1 ■ Low gate charge TO-220 ■ Very low on-resistance Applications ■ Switching applications Figure 1. Interna

 1.3. tsm75n75cz.pdf Size:62K _update_mosfet

75N75
75N75

 TSM75N75 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(mΩ) ID (A) 2. Drain 3. Source 75 11 @ VGS =10V 75 Features Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 11mΩ (Max.) ● Low gate charge typical @ 81nC (Typ.) ● Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Package Packing

1.4. cs75n75b8h.pdf Size:843K _update_mosfet

75N75
75N75

Silicon N-Channel Power MOSFET R ○ CS75N75 B8H General Description: VDSS 75 V CS75N75 B8H, the silicon N-channel Enhanced ID 100 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 10.2 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 1.5. hrs75n75v.pdf Size:199K _update_mosfet

75N75
75N75

Fab 2014 BVDSS = 70 V RDS(on) typ = 6 HRS75N75V ID = 48 A 70V N-Channel Trench MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.0 (Typ.) @VGS=10V 100% Avalanche Tested Abs

1.6. hrp75n75v.pdf Size:211K _update_mosfet

75N75
75N75

Fab 2014 BVDSS = 70 V RDS(on) typ = 6 HRP75N75V ID = 48 A 70V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.0 (Typ.) @VGS=10V 100% Avalanche Tested Abso

1.7. kmb075n75p.pdf Size:430K _update_mosfet

75N75
75N75

KMB075N75P SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ + correction , electronic lamp ballasts based o

1.8. cs75n75.pdf Size:63K _update_mosfet

75N75

CS75N75型N沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 220 W 线性降低系数 1.4 W/℃ ID (VGS=10V,TC=25℃) 75 A 极 ID (VGS=10V,TC=100℃) 56 A 限 IDM 300 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.8 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 75 V RDS on) VGS=10V,ID=48A 0.0125 0.015 Ω (

1.9. ps75n75.pdf Size:188K _update_mosfet

75N75
75N75

E L E C T R O N I C PS75N75 N-Channel Enhancement Mode Field Effect Transistor - 75Amp 75Volt □ Application -Servomotor control -Power MOSFET gate drivers -Other switching applications □ Circuit □ Feature -Small surface mounting type D -High density cell design for low RDS(ON) -Suitable for high packing density -Rugged and reliable -High saturation current cap

1.10. ps75n75a.pdf Size:303K _update_mosfet

75N75
75N75

PS75N75A 75V Single Channel NMOSEFT Revision : 1.0 Update Date : Apr. 2011 ProsPower Microelectronics Co., Ltd  PS75N75A 75V Single Channel NMOSFET 2. Applications 1. General Description Solenoid and relay drivers The PS75N75A uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC converters gate charge. This device

1.11. 75n75.pdf Size:218K _utc

75N75
75N75

UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F ? DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching 1 speed, low thermal resistance, usually used at telecom and 1 computer application. TO-220F1 TO-220F2 ? FEATURES * RDS(ON)=11m? @

1.12. utt75n75.pdf Size:164K _utc

75N75
75N75

UNISONIC TECHNOLOGIES CO., LTD UTT75N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics including 1 fast switching speed and low thermal resistance. It is usually used TO-220 in the telecom and computer applications. FEATURES * RDS(ON)

1.13. br75n75.pdf Size:905K _blue-rocket-elect

75N75
75N75

BR75N75(BRCS75N75R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hig

1.14. l75n75.pdf Size:552K _lrc

75N75
75N75

LESHAN RADIO COMPANY, LTD. L75N75 1/7 LESHAN RADIO COMPANY, LTD. L75N75 2/7 LESHAN RADIO COMPANY, LTD. L75N75 3/7 LESHAN RADIO COMPANY, LTD. L75N75 4/7 LESHAN RADIO COMPANY, LTD. L75N75 5/7 LESHAN RADIO COMPANY, LTD. L75N75 6/7 LESHAN RADIO COMPANY, LTD. L75N75 7/7

1.15. cs75n75 b8h.pdf Size:843K _crhj

75N75
75N75

Silicon N-Channel Power MOSFET R ○ CS75N75 B8H General Description: VDSS 75 V CS75N75 B8H, the silicon N-channel Enhanced ID 100 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 10.2 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.16. ftk75n75.pdf Size:366K _first_silicon

75N75
75N75

SEMICONDUCTOR FTK75N75 TECHNICAL DATA ID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls High density cell design for ultra low Rdson TO-220 Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK75N75 is a new generation of middle voltage and 1 2 3

1.17. 75n75.pdf Size:2550K _shenzhen-tuofeng-semi

75N75
75N75

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 75N75 N-Channel Enhancement Mode MOSFET Features Pin Description 70V/80A, RDS(ON)=5.6 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged G D S Lead Free and Green Devices Available (RoHS Compliant) D Applications G • Power Management for Inverter Systems. S N-Channel MOSFET ÿ Note: lead-free products contain m

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