UTT30N08 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UTT30N08
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 28 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 390 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
Тип корпуса: TO-252
Аналог (замена) для UTT30N08
UTT30N08 Datasheet (PDF)
utt30n08.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N08 Preliminary Power MOSFET 80V, 30A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N08 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy
utt30n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used in automotiveapplications of power suppl
utt30n10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N10 Preliminary Power MOSFET 30A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N10 is a N-channel mode power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT30N10 is suitable for high voltage synchronous rectifier and DC/DC co
utt30n10.pdf

Isc N-Channel MOSFET Transistor UTT30N10FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
Другие MOSFET... UK4145 , UTT100N06 , UTT100N08 , UTT10N10 , UTT120N06 , UTT150N06 , UTT20N10 , UTT25N08 , 12N60 , UTT30N10 , UTT36N10 , UTT50N06 , UTT60N06 , UTT60N10 , UTT6N10 , UTT75N08 , UTT75N75 .
History: IXFT52N50P2 | TPCA8A09-H | IPB80N06S2-07 | DMG3413L | TF68N80 | STL9N60M2 | IPB083N10N3G
History: IXFT52N50P2 | TPCA8A09-H | IPB80N06S2-07 | DMG3413L | TF68N80 | STL9N60M2 | IPB083N10N3G



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