UTT30N08 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UTT30N08
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 28 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 390 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
Тип корпуса: TO-252
- подбор MOSFET транзистора по параметрам
UTT30N08 Datasheet (PDF)
utt30n08.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N08 Preliminary Power MOSFET 80V, 30A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N08 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy
utt30n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used in automotiveapplications of power suppl
utt30n10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N10 Preliminary Power MOSFET 30A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N10 is a N-channel mode power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT30N10 is suitable for high voltage synchronous rectifier and DC/DC co
utt30n10.pdf

Isc N-Channel MOSFET Transistor UTT30N10FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IPW60R040C7 | IRFR1N60APBF | VB9220 | NVD4C05N | IRLR2703 | ELM13403CA | 2SK3927-01L
History: IPW60R040C7 | IRFR1N60APBF | VB9220 | NVD4C05N | IRLR2703 | ELM13403CA | 2SK3927-01L



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent | tip122 transistor equivalent | irfz44n equivalent | 2n2923 | 2n2102 | mj15003g