UTT80N06. Аналоги и основные параметры
Наименование производителя: UTT80N06
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 147 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 259 ns
Cossⓘ - Выходная емкость: 910 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Аналог (замена) для UTT80N06
- подборⓘ MOSFET транзистора по параметрам
UTT80N06 даташит
utt80n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary Power MOSFET 60V, 80A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and high switching speed. It can also withstand high energy pluse in the avalanche and commutation mode. The UTC U
utt80n08.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL 2.Drai
utt80n05.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N05 Preliminary Power MOSFET 80A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N05 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, superior switching performance and low gate charge. The UTC UTT80N05 is suitable for switching regulators, DC line
utt80n75.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N75 is an N-Channel power MOSFET, it uses UTC s advanced technology to provide customers with a minimum 1 on-state resistance, low gate charge and high switching speed. TO-220 FEATURES * 80A, 75V, RDS(ON)=10m @VGS=10V, ID=20A * Low gate charge
Другие IGBT... UTT30N10, UTT36N10, UTT50N06, UTT60N06, UTT60N10, UTT6N10, UTT75N08, UTT75N75, SPP20N60C3, UTT80N08, UTT80N75, UDN302, UT2301, UT2301Z, UT2305, UT2305A, UT2311
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