UT3404
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UT3404
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.4
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 5.8
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 3.8
ns
Cossⓘ - Выходная емкость: 102
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0225
Ohm
Тип корпуса:
SOT-23
- подбор MOSFET транзистора по параметрам
UT3404
Datasheet (PDF)
..1. Size:247K utc
ut3404.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
..2. Size:894K cn vbsemi
ut3404.pdf 

UT3404www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1
0.1. Size:241K utc
ut3404g-ae3-r ut3404g-s08-r.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
9.1. Size:272K utc
ut3403.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT3403 Power MOSFET -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch
9.2. Size:292K utc
ut3401.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMappli
9.3. Size:301K utc
ut3401z.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp
9.4. Size:323K utc
ut3401zl-ae3-r ut3401zg-ae3-r.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMa
9.5. Size:233K utc
ut3400l-ae2-r ut3400g-ae2-r ut3400l-ae3-r ut3400g-ae3-r.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT3400 Power MOSFET 5.8A, 30V N-CHANNEL ENHANCEMENT MODE POWER 3MOSFET 21SOT-23(EIAJ SC-59) DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing 3the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. 2The UTC UT3400 is optimized for applications, such as a lo
9.6. Size:294K utc
ut3401g-ae3-r.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp
9.7. Size:126K utc
ut3406.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT3406 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and can be operated at low gate voltages. This device is perfect fit for use as a load switch or in PWM applications. FEATURES * VDS (V) = 30V * ID = 3
9.8. Size:197K utc
ut3409.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
9.9. Size:150K utc
ut3400.pdf 

UNISONIC TECHNOLOGIES CO., LTD UT3400 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400 is optimized for applications, such as a load switch or in PWM. FEATURES * VDS (V)=30V
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History: TDM3430
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