UTT25P06 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UTT25P06
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 27.5 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 72 ns
Cossⓘ - Выходная емкость: 345 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
Тип корпуса: TO-220 TO-251 TO-252
- подбор MOSFET транзистора по параметрам
UTT25P06 Datasheet (PDF)
utt25p06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT25P06 Preliminary Power MOSFET -60V, -27.5A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P06 is suitable for power sup
utt25p10l-ta3-t utt25p10g-ta3-t utt25p10l-tf3-t utt25p10g-tf3-t utt25p10l-tn3-r utt25p10g-tn3-r utt25p10l-tq2-t utt25p10g-tq2-t utt25p10l-tq2-r utt25p10g-tq2-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customerswith high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor drivers,switc
utt25p10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET Preliminary 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor d
utt25p10l.pdf

UTT25P10Lwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Switc
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History: PHP45N03LT
History: PHP45N03LT



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