Справочник MOSFET. MTB12P06J3

 

MTB12P06J3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTB12P06J3
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 126 nC
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 361 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0102 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для MTB12P06J3

 

 

MTB12P06J3 Datasheet (PDF)

 ..1. Size:393K  cystek
 mtb12p06j3.pdf

MTB12P06J3 MTB12P06J3

Spec. No. : C584J3 Issued Date : 2014.07.20 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB12P06J3 ID -70ARDS(ON)@VGS=-10V, ID=-20A 10.2m(typ) RDS(ON)@VGS=-4.5V, ID=-20A 11.9m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package

 7.1. Size:336K  cystek
 mtb12p04j3.pdf

MTB12P06J3 MTB12P06J3

Spec. No. : C734J3 Issued Date : 2009.07.09 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -40VMTB12P04J3 ID -25A12.6m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTB12P04J3 TO-252 GGate D

 9.1. Size:295K  cystek
 mtb12n04j3.pdf

MTB12P06J3 MTB12P06J3

Spec. No. : C450J3 Issued Date : 2009.03.13 CYStech Electronics Corp.Revised Date :2010.05.17 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 40VID 30AMTB12N04J3 RDS(ON) 12m Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package & Halogen-free package Symbol Outline MTB12N0

 9.2. Size:280K  cystek
 mtb12n03j3.pdf

MTB12P06J3 MTB12P06J3

Spec. No. : C730J3 Issued Date : 2011.03.04 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB12N03J3ID 40A8.5m(typ.) RDSON@VGS=10V, ID=15A 13.5m(typ.) RDSON@VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynam

 9.3. Size:319K  cystek
 mtb12n03q8.pdf

MTB12P06J3 MTB12P06J3

Spec. No. : C730Q8 Issued Date : 2009.07.02 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB12N03Q8ID 12ARDSON(max) 11.5m Description The MTB12N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

Другие MOSFET... MTB110P10E3 , MTB110P10F3 , MTB110P10J3 , MTB11N03Q8 , MTB12N03J3 , MTB12N03Q8 , MTB12N04J3 , MTB12P04J3 , IRF1010E , MTB13N03Q8 , MTB14A03V8 , MTB14P03Q8 , MTB15P04J3 , MTB16P04J3 , MTB17A03Q8 , MTB17A03V8 , MTB17N03Q8 .

 

 
Back to Top