MTC4501Q8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTC4501Q8
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20(16) V
Максимально допустимый постоянный ток стока |Id|: 7(5.3) A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 8.4 nC
Время нарастания (tr): 5.2(20) ns
Выходная емкость (Cd): 150(440) pf
Сопротивление сток-исток открытого транзистора (Rds): 0.028(0.05) Ohm
Тип корпуса: SOP-8
MTC4501Q8 Datasheet (PDF)
mtc4501q8.pdf
Spec. No. : C385Q8 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date : 2011.03.18 Page No. : 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4501Q8 Description The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design,
mtc4506q8.pdf
Spec. No. : C780Q8 Issued Date : 2012.05.17 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC4506Q8 BVDSS 60V -60VID 5.3A -3.9ARDSON(typ.) @VGS=(-)10V 28m 57m RDSON(typ.) @VGS=(-)4.5V 31m 67m Description The MTC4506Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SO
mtc4503q8g.pdf
Spec. No. : C384Q8 Issued Date : 2010.12.10 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8G Description The MTC4503Q8G consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on
mtc4503lq8.pdf
Spec. No. : C384Q8 Issued Date : 2015.01.06 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503LQ8 Description The MTC4503LQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on
mtc4505q8.pdf
Spec. No. : C439Q8 Issued Date : 2009.02.19 CYStech Electronics Corp.Revised Date : 2014.02.06 Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC4505Q8 BVDSS 30V -30VID 12A -10ARDSON(max) 14m 20mDescription The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with t
mtc4503q8.pdf
Spec. No. : C384Q8 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2014.03.26 Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design,
mtc4506j4.pdf
Spec. No. : C780J4 Issued Date : 2014.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTC4506J4 BVDSS 60V -60VID 5.4A -4.0ARDSON(typ.) @VGS=(-)10V 25.5m 46.5m RDSON(typ.) @VGS=(-)4.5V 28m 56.6m Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free packa
mtc4503aq8.pdf
Spec. No. : C384Q8 Issued Date : 2012.04.30 CYStech Electronics Corp.Revised Date : 2014.03.07 Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC4503AQ8 BVDSS 30V -30VID 11A -9.5ARDSON(typ.) @VGS=(-)10V 13m 21m RDSON(typ.) @VGS=(-)4.5V 20m 34m Description The MTC4503AQ8 consists of a N-channel and a P-channel enhancement-mode MOS
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