Справочник MOSFET. MTDN9922Q8

 

MTDN9922Q8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTDN9922Q8
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 280 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: SOP-8

 Аналог (замена) для MTDN9922Q8

 

 

MTDN9922Q8 Datasheet (PDF)

 ..1. Size:388K  cystek
 mtdn9922q8.pdf

MTDN9922Q8 MTDN9922Q8

Spec. No. : C425Q8 Issued Date : 2007.12.06 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9922Q8 Description The MTDN9922Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a

 7.1. Size:422K  cystek
 mtdn9926q8.pdf

MTDN9922Q8 MTDN9922Q8

Spec. No. : C747Q8 Issued Date : 2009.11.09 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 20VMTDN9926Q8 ID 6A28m RDSON(MAX) Description The MTDN9926Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8

 8.1. Size:383K  cystek
 mtdn9973q8.pdf

MTDN9922Q8 MTDN9922Q8

Spec. No. : C418Q8 Issued Date : 2007.09.20 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9973Q8 Description The MTDN9973Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a

 8.2. Size:383K  cystek
 mtdn9971q8.pdf

MTDN9922Q8 MTDN9922Q8

Spec. No. : C415Q8 Issued Date : 2007.07.05 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9971Q8 Description The MTDN9971Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a

 8.3. Size:384K  cystek
 mtdn9946q8.pdf

MTDN9922Q8 MTDN9922Q8

Spec. No. : C598Q8 Issued Date : 2009.11.11 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30VMTDN9946Q8 ID 5A35m RDSON(MAX) Description The MTDN9946Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8

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