MTN10N60FP - Даташиты. Аналоги. Основные параметры
Наименование производителя: MTN10N60FP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 46 ns
Cossⓘ - Выходная емкость: 180 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
Тип корпуса: TO-220FP
Аналог (замена) для MTN10N60FP
MTN10N60FP Datasheet (PDF)
mtn10n60fp.pdf

Spec. No. : C406FP Issued Date : 2008.12.02 CYStech Electronics Corp.Revised Date :2014.02.10 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(MAX) : 0.75 MTN10N60FP ID : 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
mtn10n60e3.pdf

Spec. No. : C406E3 Issued Date : 2010.09.27 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(MAX) : 0.75 MTN10N60E3 ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance an
mtn10n65ea.pdf

Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V @Tj=150 RDS(ON) : 0.85 MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l
mtn10n65fpg.pdf

Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2011.08.15 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FPG ID : 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
Другие MOSFET... MTN003N03S3 , MTN0401LA3 , MTN0410L3 , MTN04N03F3 , MTN1012C3 , MTN1012ZC3 , MTN10N40E3 , MTN10N60E3 , IRF3710 , MTN10N65EA , MTN10N65FP , MTN10N65FPG , MTN10N70EA , MTN12N60E3 , MTN12N60FP , MTN12N65FP , MTN1308E3 .
History: JCS7HN60F | RJK0226DNS | VBZE7843 | 2SK3438 | AOTF160A60L | HM607K | AM90N03-04D
History: JCS7HN60F | RJK0226DNS | VBZE7843 | 2SK3438 | AOTF160A60L | HM607K | AM90N03-04D



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