MTN2310V8 - параметры транзистора MOSFET, его аналоги, datasheet

MTN2310V8 Datasheet (PDF)

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Spec. No. : C393V8 Issued Date : 2013.06.13 CYStech Electronics Corp.Revised Date : 2013.06.24 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTN2310V8ID 14A31m VGS=10V, ID=3A RDSON(TYP) 35m VGS=4.5V, ID=2A Description The MTN2310V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

7.1. Size:338K cystek
mtn2310m3.pdf pdf_icon

Spec. No. : C393M3 Issued Date : 2007.05.28 CYStech Electronics Corp.Revised Date : 2015.09.02 Page No. : 1/9 60V N-Channel Enhancement Mode MOSFET BVDSS 60VMTN2310M3 ID@VGS=10V, TA=25C 4.8A RDSON@VGS=10V, ID=4A 41m(typ) RDSON@VGS=5V, ID=3A 46m(typ) Features Simple drive requirement Small package outline Pb-free lead plating package Symbol Outline

7.2. Size:311K cystek
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Spec. No. : C393N3 CYStech Electronics Corp. Issued Date : 2007.11.26 Revised Date :2013.12.30 Page No. : 1/9 60V N-CHANNEL Enhancement Mode MOSFET BVDSS 60VMTN2310N3 ID 4ARDSON@VGS=10V, ID=4A 41m(typ) RDSON@VGS=5V, ID=3A 46m(typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Outline MT

7.3. Size:1231K jiejie micro
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60V, 3A, 95.6m N-channel Power Trench MOSFETJMTN2310AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 3 A Pb-free platingRDS(ON)_Typ(@VGS=10V 85.0 mWRDS(ON)_Typ(@VGS=4.5V 95.6 mWApplications Load Switch P

Другие MOSFET... MTN2304M3 , MTN2304N3 , MTN2306AM3 , MTN2306AN3 , MTN2306N3 , MTN2306ZN3 , MTN2310M3 , MTN2310N3 , 20N50 , MTN2328M3 , MTN2328N3 , MTN2342N3 , MTN2510E3 , MTN2510F3 , MTN2510H8 , MTN2510J3 , MTN2510LE3 .