MTN3N60I3 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MTN3N60I3
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 58 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.6 Ohm
Тип корпуса: TO-251
Аналог (замена) для MTN3N60I3
MTN3N60I3 Datasheet (PDF)
mtn3n60i3.pdf

Spec. No. : C798I3 Issued Date : 2010.08.12 CYStech Electronics Corp.Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 3.6 (typ.) MTN3N60I3 ID : 3A Description The MTN3N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
mtn3n60j3.pdf

Spec. No. : C798J3 Issued Date : 2010.08.12 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 3.6 (typ.) MTN3N60J3 ID : 3A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and halogen-free package Applications
mtn3n60fp.pdf

Spec. No. : C798FP Issued Date : 2010.03.12 CYStech Electronics Corp.Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 3.6 (typ.) MTN3N60FP ID : 3A Description The MTN3N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
mtn3n65fp.pdf

Spec. No. : C798FP Issued Date : 2010.03.12 CYStech Electronics Corp.Revised Date : 2011.03.30 Page No. : 1/ 11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 3.6 (typ.) MTN3N65FP ID : 3A Description The MTN3N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
Другие MOSFET... MTN351AN3 , MTN35N03J3 , MTN3607E3 , MTN3607F3 , MTN3820F3 , MTN3820J3 , MTN3K01N3 , MTN3N60FP , IRF540N , MTN3N60J3 , MTN3N65FP , MTN40N03I3 , MTN40N03J3 , MTN4402Q8 , MTN4410Q8 , MTN4410V8 , MTN4424Q8 .
History: AOB266L | UPA1820GR | TPCA8010-H | PZD502CYB | L2N60D
History: AOB266L | UPA1820GR | TPCA8010-H | PZD502CYB | L2N60D



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