MTN7000ZA3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTN7000ZA3
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.3 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 25 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.25 Ohm
Тип корпуса: TO-92
Аналог (замена) для MTN7000ZA3
MTN7000ZA3 Datasheet (PDF)
mtn7000za3.pdf
Spec. No. : C403A3 Issued Date : 2006.07.14 CYStech Electronics Corp.Revised Date : Page No. : 1/6 N-CHANNEL MOSFET MTN7000ZA3 Description The MTN7000ZA3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free
mtn7000zha3.pdf
Spec. No. : C320A3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date : 2013.12.24 Page No. : 1/7 N-Channel MOSFET BVDSS 60V ID 115mAMTN7000ZHA3 RDSON (typ.) 3 Features Low on-resistance High ESD capability High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free packa
mtn7000a3.pdf
Spec. No. : C325A3 Issued Date : 2004.02.13 CYStech Electronics Corp.Revised Date :2007.10.05 Page No. : 1/5 N-CHANNEL MOSFET MTN7000A3 Description The MTN7000A3 is a N-channel enhancement-mode MOSFET. Symbol Outline MTN7000A3 TO-92 GGate SSource S G DDDrain Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitDrain-Source Voltage VDSS 60 V
mtn7002zhs3.pdf
Spec. No. : C320S3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date : 2014.01.28 Page No. : 1/7 N-Channel Enhancement Mode MOSFET MTN7002ZHS3 Description The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance Low-voltage drive(4V) High ESD Easily designed drive circuits High speed switching Easy to use in
mtn7002n3.pdf
Spec. No. : C325N3 Issued Date : 2002.12.18 CYStech Electronics Corp.Revised Date : 2007.12.12 Page No. : 1/5 N-CHANNEL MOSFET MTN7002N3 Description The MTN7002N3 is a N-channel enhancement-mode MOSFET. Symbol Outline MTN7002N3 SOT-23 D SG GGate SSource DDrain Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitDrain-Source Voltage BVD
mtn7002s3.pdf
Spec. No. : C325S3 Issued Date : 2005.06.15 CYStech Electronics Corp.Revised Date : Page No. : 1/4 N-CHANNEL MOSFET MTN7002S3 Description The MTN7002S3 is a N-channel enhancement-mode MOSFET. Pb-free package Symbol Outline MTN7002S3 SOT-323 D SG GGate SSource DDrain Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitDrain-Sour
mtn7002zs3.pdf
Spec. No. : C403S3 Issued Date : 2007.10.17 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZS3 Description The MTN7002ZS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(3V) Easily designed drive circuits Easy to use in parallel
mtn7002zhn3.pdf
Spec. No. : C320N3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date :2013.12.17 Page No. : 1/7 N-Channel Logic Level Enhancement Mode MOSFET MTN7002ZHN3 Features Low on-resistance High ESD High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free packa
mtn7002zas3.pdf
Spec. No. : C320S3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZAS3 Description The MTN7002ZAS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel
mtn7002zn3.pdf
Spec. No. : C313N3-H Issued Date : 2003.09.26 CYStech Electronics Corp.Revised Date :2014.04.25 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZN3 Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free package Symbol Outline M
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History: IRF510A
History: IRF510A
Список транзисторов
Обновления
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