FSL23AOD,S E M I C O N D U C T O RFSL23AORRadiation Hardened, SEGR ResistantN-Channel Power MOSFETsFebruary 1998Features Description 6A, 200V, rDS(ON) = 0.350 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MOSFE

FSL23A4D, FSL23A4R5A, 250V, 0.480 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 5A, 250V, rDS(ON) = 0.480 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Si

PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F

PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F

PD - 95536IRFB23N20DPbF IRFS23N20DPbFSMPS MOSFET IRFSL23N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.10 24Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc

FSL230D, FSL230R5A, 200V, 0.460 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

FSL234D, FSL234R4A, 250V, 0.610 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 4A, 250V, rDS(ON) = 0.610 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

Isc N-Channel MOSFET Transistor IRFSL23N20DFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Isc N-Channel MOSFET Transistor IRFSL23N15DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage