AO443712V P-Channel MOSFETGeneral Description Product SummaryThe AO4437 uses advanced trench technology to provide VDS (V) = -12Vexcellent RDS(ON), low gate charge and operation with gateID = -11 A (VGS = -4.5V)voltages as low as 1.8V. This device is suitable for use as aRDS(ON)

SMD Type MOSFETP-Channel MOSFETAO4437 (KO4437)SOP-8 Features VDS (V) =-12V ID =-11 A (VGS =-4.5V) RDS(ON) 16m (VGS =-4.5V) 0.151.50 RDS(ON) 20m (VGS =-2.5V) RDS(ON) 25m (VGS =-1.8V)1 Source 5 Drain ESD Rating: 4KV HBM6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Par

AO4437www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical ES

AO443860V N-Channel MOSFETGeneral Description Product SummaryThe AO4438 uses advanced trench technology to VDS (V) = 60Vprovide excellent RDS(ON) and low gate charge. This ID = 8.2A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)

AO4430N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO4430/L uses advanced trench technology to provideVDS (V) = 30Vexcellent RDS(ON), shoot-through immunity, body diodeID = 18A (VGS = 10V)characteristics and ultra-low gate resistance. This device isRDS(ON)

AO443330V P-Channel MOSFETGeneral Description Product SummaryThe AO4433 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and ultra-low low gate chargeID = -11 A (VGS = -20V)with a 25V gate rating. This device is suitable for useRDS(ON)

AO443530V P-Channel MOSFETGeneral Description Product SummaryThe AO4435 uses advanced trench technology to VDS = -30Vprovide excellent RDS(ON), and ultra-low low gate chargeID = -10.5A (VGS = -20V)with a 25V gate rating. This device is suitable for use asRDS(ON)

SMD Type MOSFETN-Channel MOSFETAO4438 (KO4438)SOP-8 Features VDS (V) = 60V ID = 8.2 A (VGS = 10V) RDS(ON) 22m (VGS = 10V)1.50 0.15 RDS(ON) 27m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate

SMD Type MOSFETN-Channel MOSFETAO4430 (KO4430)SOP-8 Features VDS (V) = 30V ID = 18 A (VGS = 10V) RDS(ON) 5.5m (VGS = 10V)1.50 0.15 RDS(ON) 7.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gat

SMD Type MOSFETP-Channel MOSFETAO4435 (KO4435)SOP-8 Features VDS (V) =-30V ID =-10.5 A (VGS =-20V)1.50 0.15 RDS(ON) 14m (VGS =-20V) RDS(ON) 18m (VGS =-10V)1 Source 5 Drain RDS(ON) 36m (VGS =-5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

AO4438www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL Inv

AO4430www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-