AO4438 - описание и поиск аналогов

 ..1. Size:245K  aosemi
 ao4438.pdf 

AO4438 60V N-Channel MOSFET General Description Product Summary The AO4438 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. This ID = 8.2A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

 ..2. Size:1233K  kexin
 ao4438.pdf 

SMD Type MOSFET N-Channel MOSFET AO4438 (KO4438) SOP-8 Features VDS (V) = 60V ID = 8.2 A (VGS = 10V) RDS(ON) 22m (VGS = 10V) 1.50 0.15 RDS(ON) 27m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate

 ..3. Size:1687K  cn vbsemi
 ao4438.pdf 

AO4438 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCFL Inv

 9.1. Size:164K  aosemi
 ao4437.pdf 

AO4437 12V P-Channel MOSFET General Description Product Summary The AO4437 uses advanced trench technology to provide VDS (V) = -12V excellent RDS(ON), low gate charge and operation with gate ID = -11 A (VGS = -4.5V) voltages as low as 1.8V. This device is suitable for use as a RDS(ON)

 9.2. Size:279K  aosemi
 ao4430.pdf 

AO4430 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4430/L uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), shoot-through immunity, body diode ID = 18A (VGS = 10V) characteristics and ultra-low gate resistance. This device is RDS(ON)

 9.3. Size:185K  aosemi
 ao4433.pdf 

AO4433 30V P-Channel MOSFET General Description Product Summary The AO4433 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) and ultra-low low gate charge ID = -11 A (VGS = -20V) with a 25V gate rating. This device is suitable for use RDS(ON)

 9.4. Size:190K  aosemi
 ao4435.pdf 

AO4435 30V P-Channel MOSFET General Description Product Summary The AO4435 uses advanced trench technology to VDS = -30V provide excellent RDS(ON), and ultra-low low gate charge ID = -10.5A (VGS = -20V) with a 25V gate rating. This device is suitable for use as RDS(ON)

 9.5. Size:1491K  kexin
 ao4437.pdf 

SMD Type MOSFET P-Channel MOSFET AO4437 (KO4437) SOP-8 Features VDS (V) =-12V ID =-11 A (VGS =-4.5V) RDS(ON) 16m (VGS =-4.5V) 0.15 1.50 RDS(ON) 20m (VGS =-2.5V) RDS(ON) 25m (VGS =-1.8V) 1 Source 5 Drain ESD Rating 4KV HBM 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Par

 9.6. Size:1180K  kexin
 ao4430.pdf 

SMD Type MOSFET N-Channel MOSFET AO4430 (KO4430) SOP-8 Features VDS (V) = 30V ID = 18 A (VGS = 10V) RDS(ON) 5.5m (VGS = 10V) 1.50 0.15 RDS(ON) 7.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gat

 9.7. Size:1089K  kexin
 ao4435.pdf 

SMD Type MOSFET P-Channel MOSFET AO4435 (KO4435) SOP-8 Features VDS (V) =-30V ID =-10.5 A (VGS =-20V) 1.50 0.15 RDS(ON) 14m (VGS =-20V) RDS(ON) 18m (VGS =-10V) 1 Source 5 Drain RDS(ON) 36m (VGS =-5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr

 9.8. Size:1726K  cn vbsemi
 ao4437.pdf 

AO4437 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical ES

 9.9. Size:1689K  cn vbsemi
 ao4430.pdf 

AO4430 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-