AO4444L - описание и поиск аналогов

 ..1. Size:279K  aosemi
 ao4444l.pdf 

AO4444L 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AO4444L is fabricated with SDMOSTM trench 11A ID (at VGS=10V) technology that combines excellent RDS(ON) with low gate

 8.1. Size:1251K  kexin
 ao4444.pdf 

SMD Type MOSFET N-Channel MOSFET AO4444 (KO4444) SOP-8 Features VDS (V) = 30V ID = 20 A (VGS = 10V) 1.50 0.15 RDS(ON) 5.5m (VGS = 10V) RDS(ON) 7.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gat

 9.1. Size:302K  aosemi
 ao4441.pdf 

AO4441 60V P-Channel MOSFET General Description Product Summary VDS The AO4441 uses advanced trench technology to provide -60V excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -4A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 9.2. Size:167K  aosemi
 ao4440.pdf 

AO4440 60V N-Channel MOSFET General Description Product Summary The AO4440 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. This ID = 5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

 9.3. Size:166K  aosemi
 ao4446.pdf 

AO4446 30V N-Channel MOSFET General Description Product Summary The AO4446 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and low ID = 15A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON)

 9.4. Size:286K  aosemi
 ao4448.pdf 

AO4448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AO4448 is fabricated with SDMOSTM trench ID (at VGS=10V) 10A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 9.5. Size:246K  aosemi
 ao4442.pdf 

AO4442 75V N-Channel MOSFET General Description Product Summary VDS 75V The AO4442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and ID (at VGS=10V) 3.1A operation with gate voltages from 4.5V to 25V. This RDS(ON) (at VGS=10V)

 9.6. Size:609K  aosemi
 ao4449.pdf 

AO4449 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -7A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 9.7. Size:308K  aosemi
 ao4443.pdf 

AO4443 40V P-Channel MOSFET General Description Product Summary VDS -40V The AO4443 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -6A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 9.8. Size:169K  aosemi
 ao4447.pdf 

AO4447 30V P-Channel MOSFET General Description Product Summary The AO4447 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), and ultra-low low gate ID = -15 A (VGS = -10V) charge. This device is suitable for use as a load Max RDS(ON)

 9.9. Size:302K  aosemi
 ao4447a.pdf 

AO4447A 30V P-Channel MOSFET General Description Product Summary The AO4447A uses advanced trench technology to VDS -30V provide excellent RDS(ON) with low gate charge.This ID (at VGS = -10V) -17A device is ideal for load switch and battery protection RDS(ON) (at VGS = -10V)

 9.10. Size:1248K  kexin
 ao4441.pdf 

SMD Type MOSFET P-Channel MOSFET AO4441 (KO4441) SOP-8 Features VDS (V) =-60V ID =-4 A (VGS =-10V) RDS(ON) 100m (VGS =-10V) 1.50 0.15 RDS(ON) 130m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gat

 9.11. Size:1234K  kexin
 ao4440.pdf 

SMD Type MOSFET N-Channel MOSFET AO4440 (KO4440) SOP-8 Features VDS (V) = 60V ID = 5 A (VGS = 10V) RDS(ON) 55m (VGS = 10V) 1.50 0.15 RDS(ON) 75m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-So

 9.12. Size:1386K  kexin
 ao4446.pdf 

SMD Type MOSFET N-Channel MOSFET AO4446 (KO4446) SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 8.5m (VGS = 10V) 1.50 0.15 RDS(ON) 14.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Ga

 9.13. Size:1559K  kexin
 ao4448.pdf 

SMD Type MOSFET N-Channel MOSFET AO4448 (KO4448) SOP-8 Features VDS (V) = 80V ID = 10 A (VGS = 10V) RDS(ON) 16m (VGS = 10V) 1.50 0.15 RDS(ON) 20m (VGS = 7V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 80 V Gate-So

 9.14. Size:1264K  kexin
 ao4442.pdf 

SMD Type MOSFET N-Channel MOSFET AO4442 (KO4442) SOP-8 Features VDS (V) = 75V ID = 3.1 A (VGS = 10V) RDS(ON) 130m (VGS = 10V) 1.50 0.15 RDS(ON) 165m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 75 V Ga

 9.15. Size:2066K  kexin
 ao4449.pdf 

SMD Type MOSFET P-Channel MOSFET AO4449 (KO4449) SOP-8 Features VDS (V) =-30V ID =-7 A (VGS =-10V) RDS(ON) 34m (VGS =-10V) 1.50 0.15 RDS(ON) 54m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30

 9.16. Size:1234K  kexin
 ao4443.pdf 

SMD Type MOSFET P-Channel MOSFET AO4443 (KO4443) SOP-8 Features VDS (V) =-40V ID =-6.5 A (VGS =-10V) RDS(ON) 42m (VGS =-10V) 1.50 0.15 RDS(ON) 63m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -40 V Gat

 9.17. Size:1526K  kexin
 ao4447.pdf 

SMD Type MOSFET P-Channel MOSFET AO4447 (KO4447) SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-10V) RDS(ON) 7.5m (VGS =-10V) 1.50 0.15 RDS(ON) 12m (VGS =-4.5V) ESD Rating 4KV HBM 1 Source 5 Drain 6 Drain D 2 Source 7 Drain 3 Source 8 Drain 4 Gate G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source

 9.18. Size:1685K  kexin
 ao4447a.pdf 

SMD Type MOSFET P-Channel MOSFET AO4447A (KO4447A) SOP-8 Features VDS (V) =-30V ID =-17 A (VGS =-10V) RDS(ON) 7m (VGS =-10V) 1.50 0.15 RDS(ON) 8m (VGS =-4.5V) RDS(ON) 9m (VGS =-4V) 1 Source 5 Drain ESD Rating 2000V HBM 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D Rg G S Absolute Maximum Ratings Ta = 25 Par

 9.19. Size:881K  cn vbsemi
 ao4441.pdf 

AO4441 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 100 % Rg and UIS tested RDS(on) ( ) at VGS = -10 V 0.050 RDS(on) ( ) at VGS = -4.5 V 0.060 ID (A) per leg -8 S SO-8 S 1 8 D G S D 2 7 S 3 6 D G D 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER

 9.20. Size:833K  cn vbsemi
 ao4446.pdf 

AO4446 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

 9.21. Size:803K  cn vbsemi
 ao4449.pdf 

AO4449 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi

 9.22. Size:1396K  cn vbsemi
 ao4443.pdf 

AO4443 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi

 9.23. Size:821K  cn vbsemi
 ao4447a.pdf 

AO4447A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G