AO4447A30V P-Channel MOSFETGeneral Description Product Summary The AO4447A uses advanced trench technology to VDS -30Vprovide excellent RDS(ON) with low gate charge.This ID (at VGS = -10V) -17Adevice is ideal for load switch and battery protection RDS(ON) (at VGS = -10V)

SMD Type MOSFETP-Channel MOSFETAO4447A (KO4447A)SOP-8 Features VDS (V) =-30V ID =-17 A (VGS =-10V) RDS(ON) 7m (VGS =-10V)1.50 0.15 RDS(ON) 8m (VGS =-4.5V) RDS(ON) 9m (VGS =-4V)1 Source 5 Drain ESD Rating: 2000V HBM6 Drain2 Source7 Drain3 Source8 Drain4 GateDRgGS Absolute Maximum Ratings Ta = 25Par

AO4447Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

AO444730V P-Channel MOSFETGeneral Description Product SummaryThe AO4447 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), and ultra-low low gateID = -15 A (VGS = -10V)charge. This device is suitable for use as a loadMax RDS(ON)

SMD Type MOSFETP-Channel MOSFETAO4447 (KO4447)SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-10V) RDS(ON) 7.5m (VGS =-10V)1.50 0.15 RDS(ON) 12m (VGS =-4.5V) ESD Rating: 4KV HBM1 Source 5 Drain6 DrainD 2 Source7 Drain3 Source8 Drain4 GateGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

AO444160V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO4441 uses advanced trench technology to provide -60Vexcellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -4Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

AO444060V N-Channel MOSFETGeneral Description Product SummaryThe AO4440 uses advanced trench technology to VDS (V) = 60Vprovide excellent RDS(ON) and low gate charge. ThisID = 5A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

AO444630V N-Channel MOSFETGeneral Description Product SummaryThe AO4446 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and lowID = 15A (VGS = 10V)gate resistance. This device is ideally suited for useRDS(ON)

AO444880V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AO4448 is fabricated with SDMOSTM trench ID (at VGS=10V) 10Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

AO444275V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AO4442 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and ID (at VGS=10V) 3.1Aoperation with gate voltages from 4.5V to 25V. This RDS(ON) (at VGS=10V)

AO444930V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4449 uses advanced trench technology to provideexcellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -7Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

AO444340V P-Channel MOSFETGeneral Description Product SummaryVDS-40VThe AO4443 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -6Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

AO4444L80V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AO4444L is fabricated with SDMOSTM trench 11A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate

SMD Type MOSFETP-Channel MOSFETAO4441 (KO4441)SOP-8 Features VDS (V) =-60V ID =-4 A (VGS =-10V) RDS(ON) 100m (VGS =-10V)1.50 0.15 RDS(ON) 130m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gat

SMD Type MOSFETN-Channel MOSFETAO4440 (KO4440)SOP-8 Features VDS (V) = 60V ID = 5 A (VGS = 10V) RDS(ON) 55m (VGS = 10V) 1.50 0.15 RDS(ON) 75m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-So

SMD Type MOSFETN-Channel MOSFETAO4446 (KO4446)SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 8.5m (VGS = 10V)1.50 0.15 RDS(ON) 14.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Ga

SMD Type MOSFETN-Channel MOSFETAO4448 (KO4448)SOP-8 Features VDS (V) = 80V ID = 10 A (VGS = 10V) RDS(ON) 16m (VGS = 10V)1.50 0.15 RDS(ON) 20m (VGS = 7V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 80V Gate-So

SMD Type MOSFETN-Channel MOSFETAO4442 (KO4442)SOP-8 Features VDS (V) = 75V ID = 3.1 A (VGS = 10V) RDS(ON) 130m (VGS = 10V)1.50 0.15 RDS(ON) 165m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 75V Ga

SMD Type MOSFETP-Channel MOSFETAO4449 (KO4449)SOP-8 Features VDS (V) =-30V ID =-7 A (VGS =-10V) RDS(ON) 34m (VGS =-10V)1.50 0.15 RDS(ON) 54m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30

SMD Type MOSFETP-Channel MOSFETAO4443 (KO4443)SOP-8 Features VDS (V) =-40V ID =-6.5 A (VGS =-10V) RDS(ON) 42m (VGS =-10V)1.50 0.15 RDS(ON) 63m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -40V Gat

SMD Type MOSFETN-Channel MOSFETAO4444 (KO4444)SOP-8 Features VDS (V) = 30V ID = 20 A (VGS = 10V)1.50 0.15 RDS(ON) 5.5m (VGS = 10V) RDS(ON) 7.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gat

AO4441www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.050RDS(on) () at VGS = -4.5 V 0.060ID (A) per leg -8SSO-8S1 8 DGS D2 7S3 6 DG D4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER

AO4446www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

AO4449www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop Vi

AO4443www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop Vi