AO482230V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4822 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=10V) 8Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

SMD Type MOSFETDual N-Channel MOSFETAO4822 (KO4822)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 S2 5 D1 ESD Rating: 2KV HBM6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V

AO4822A30V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4822A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V)

SMD Type MOSFETDual N-Channel MOSFETAO4822A (KO4822A)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 S2 5 D1 ESD Rating: 2KV HBM6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

AO482860V Dual N-Channel MOSFETGeneral Description FeaturesThe AO4828 uses advanced trench technology to VDS (V) = 60Vprovide excellent RDS(ON) and low gate charge. ThisID = 4.5A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

AO482660V Dual N-Channel MOSFETGeneral Description Product SummaryThe AO4826 uses advanced trench technology to VDS (V) = 60Vprovide excellent RDS(ON) and low gate charge. ThisID = 6.3A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

AO482112V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-12VThe AO4821 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -9Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=-4.5V)

SMD Type MOSFETDual N-Channel MOSFETAO4824L (KO4824L)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V1.50 0.15 ID = 8.5A (VGS = 10V) RDS(ON) 17m (VGS = 10V)1 S2 5 D1 RDS(ON) 27m (VGS = 4.5V)6 D12 G27 D23 S1N-Channel 28 D24 G1 VDS (V) = 30V ID = 9.8A (VGS = 10V) RDS(ON) 13m (VGS = 10V) RDS(ON) 15

SMD Type MOSFETDual N-Channel MOSFETAO4828 (KO4828)SOP-8 Unit:mm Features VDS (V) = 60V ID = 4.5A (VGS = 10V)1.50 0.15 RDS(ON) 56m (VGS = 10V) RDS(ON) 77m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D D1 2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Ga

SMD Type MOSFETDual N-Channel MOSFETAO4826 (KO4826)SOP-8 Unit:mm Features VDS (V) = 60V ID = 6.3A (VGS = 10V)1.50 0.15 RDS(ON) 25m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D2D1G2G1S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Ga

SMD Type MOSFETDual P-Channel MOSFETAO4821 (KO4821)SOP-8 Unit:mm Features VDS (V) = -12V ID = -9 A (VGS = -4.5V)1.50 0.15 RDS(ON) 19m (VGS = -4.5V) RDS(ON) 24m (VGS = -2.5V)1 S2 5 D1 RDS(ON) 30m (VGS = -1.8V)6 D12 G27 D23 S18 D24 G1D1D2Rg RgG1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbo

AO4826www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M

AO4821www.VBsemi.twDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS