AO7410 - описание и поиск аналогов

AO7410 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO7410 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and ID (at VGS=10V) 1.7A operation with gate voltages as low as 2.5V. This RDS(ON) (at VGS=10V)

AO7417 20V P-Channel MOSFET General Description Product Summary VDS The AO7417 uses advanced trench technology to provide -20V excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -2A voltages as low as 1.5V, in the small SOT363 footprint. RDS(ON) (at VGS=-4.5V)

AO7413 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -1.4A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

AO7415 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

AO7411 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.8A gate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)

AO7414 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.036 at VGS = 10 V 4 TrenchFET Power MOSFET 20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM 0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC AP